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| 型号： | JANTX1N752BTR-1 |
| 厂商： | Microsemi Corporation |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 中文描述： | 在250μA低电流操作，低反向漏，低噪声稳压二极管（250μA工作电流，小反向漏电流，低噪声，齐纳二极管） |
| 文件页数： | 2/3页 |
| 文件大小： | 218K |
| 代理商： | JANTX1N752BTR-1 |
Silicon 500 mW Zener Diodes
SCOTTSDALE DIVISION
1N746 thru 1N759A, -1 and
1N4370 thru 1N4372A, -1 DO-35
W
M
.
C
ELECTRICAL CHARACTERISTICS* @ 25
o
C
NOMINAL
ZENER
VOLTAGE
V
Z
@
I
ZT
(NOTE 2)
(NOTE1)
VOLTS
1N4370
1N4371
1N4372
3.0
1N746
1N747
1N748
3.9
1N749
1N750
1N751
1N752
5.6
1N753
1N754
1N755
1N756
8.2
1N757
1N758
1N759
12.0
* JEDEC Registered Data
NOTE 1:
Standard tolerance on JEDEC types shown is +/- 10%. Suffix letter A denotes +/- 5% tolerance; suffix
letter C denotes +/- 2%; and suffix letter D denotes +/- 1% tolerance.
NOTE 2:
Voltage measurements to be performed 20 seconds after application of dc test current.
NOTE 3:
Zener impedance derived by superimposing on
I
ZT
, a 60 cps, rms ac current equal to 10%
I
ZT
(2mA ac). See MicroNote 202 for
typical zener Impedance variation with different operating currents.
NOTE 4:
Allowance has been made for the increase in
V
Z
due to Z
Z
and for the increase in junction temperature as the unit approaches
thermal equilibrium at the power dissipation of 400 mW.
GRAPHS
R
MAXIMUM REVERSE
CURRENT I
R
@ V
R
= 1 VOLT
@25oC
μ
A
100
75
50
10
10
10
2
2
1
1
.1
.1
.1
.1
.1
.1
.1
ZENER
TEST
CURRENT
I
ZT
MAXIMUM
ZENER
IMPEDANCE
Z
ZT
@
I
ZT
(NOTE 3)
OHMS
30
30
29
28
24
23
22
19
17
11
7
5
6
8
10
17
30
@+150oC
μ
A
200
150
100
30
30
30
30
30
20
20
20
20
20
20
20
20
20
MAXIMUM
ZENER
CURRENT
I
ZM
(NOTE 4)
mA
150
135
120
110
100
95
85
75
70
65
60
55
50
45
40
35
30
TYPICAL
TEMP COEFF.
OF ZENER
VOLTAGE
α
VZ
%/
o
C
-.085
-.080
-.075
-.066
-.058
-.046
-.033
-.015
+/-.010
+.030
+.049
+.053
+.057
+.060
+.061
+.062
+.062
JEDEC
TYPE NO.
mA
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
2.4
2.7
3.3
3.6
4.3
4.7
5.1
6.2
6.8
7.5
9.1
10.0
1
1
FIGURE 1
POWER DERATING CURVE
T
o
C
T
T
L
– LEAD TEMPERATURE (
o
C) 3/8” FROM BODY or
T
A
on FR4 PC BOARD
NOMINAL ZENER VOLTAGE (VOLTS)
FIGURE 2
ZENER VOLTAGE TEMPERATURE
COEFFICIENT vs. ZENER VOLTAGE
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright
2003
10-31-2003 REV B
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相关代理商/技术参数 |
参数描述 |
|---|---|
| JANTX1N752C-1 | 制造商:Microsemi Corporation 功能描述:1N752C-1JANTX - Bulk |
| JANTX1N752CUR-1 | 功能描述:Zener Diode 5.6V 500mW ±2% Surface Mount DO-213AA 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/127 包装:散装 零件状态:在售 电压 - 齐纳（标称值）（Vz）:5.6V 容差:±2% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:11 欧姆 不同?Vr 时的电流 - 反向漏电流:5μA @ 2.5V 不同 If 时的电压 - 正向（Vf）:1.1V @ 200mA 工作温度:-65°C ~ 175°C 安装类型:表面贴装 封装/外壳:DO-213AA（玻璃） 供应商器件封装:DO-213AA 标准包装:1 |
| JANTX1N752DUR-1 | 制造商:Microsemi Corporation 功能描述:ZENER VOLTAGE REGULATOR DIODE - Bulk |
| JANTX1N753 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| JANTX1N753A | 制造商:Motorola 功能描述:1N753 MOTOROLA S9G3A 制造商: 功能描述: 制造商:undefined 功能描述: |
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