参数资料
型号: JANTXV1N4246
厂商: MICROSEMI CORP-SCOTTSDALE
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 1 A, SILICON, SIGNAL DIODE
封装: HERMETIC SEALED, GLASS PACKAGE-2
文件页数: 1/2页
文件大小: 266K
代理商: JANTXV1N4246
S
VOIDLESS-HERMETICALLY-SEALED
STANDARD RECOVERY GLAS
RECTIFIERS
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2004
12-07-2004 REV A
W
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SCOTTSD A L E DIVISION
1N4245 thru 1N4249
1N4245
thru
1N4249
DESCRIPTION
APPEARANCE
This “standard recovery” rectifier diode series is military qualified to MIL-PRF-
19500/286 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak
reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
similar in ratings to the 1N5614 thru 1N5622 series where surface mount MELF
package configurations are available by adding a “US” suffix (see separate data
sheet for 1N5614US thru 1N5622US). Microsemi also offers numerous other
rectifier products to meet higher and lower current ratings with various recovery time
speed requirements including fast and ultrafast device types in both through-hole
and surface mount packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Popular JEDEC registered 1N4245 to 1N4249
series
Voidless hermetically sealed glass package
Triple-Layer Passivation
Internal “Category I” Metallurgical bonds
Working Peak Reverse Voltage 200 to 1000 Volts.
JAN, JANTX, and JANTXV available per MIL-PRF-
19500/286 (for JANS, see 1N5614-5622 series)
Surface mount equivalents also available in a
square end-cap MELF configuration with “US”
suffix (see separate data sheet for 1N5614US thru
1N5622US)
Standard recovery 1 Amp rectifiers 200 to 1000 V
Military and other high-reliability applications
General rectifier applications including bridges,
half-bridges, catch diodes, etc.
High forward surge current capability
Extremely robust construction
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Junction & Storage Temperature: -65oC to +175oC
Thermal Resistance: 42oC/W junction to lead at
3/8 inch (10 mm) lead length from body
Thermal Impedance: 4.5oC/W @ 10 ms
Average Rectified Forward Current (IO): 1.0 Amps
@ TA = 55C
Forward Surge Current: 25 Amps @ 8.3 ms half-
sine
Solder Temperatures: 260C for 10 s (maximum)
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: Axial leads are copper with
Tin/Lead (Sn/Pb) finish
MARKING: Body paint and part number, etc.
POLARITY: Cathode band
TAPE & REEL option: Standard per EIA-296
WEIGHT: 340 mg
See package dimensions on last page
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
MINIMUM
BREAKDOWN
VOLTAGE
VBR @ 100A
AVERAGE
RECTIFIED
CURRENT
IO @ TA = 55
oC
MAXIMUM
FORWARD
VOLTAGE
VF @ 3 A
MAXIMUM
REVERSE
CURRENT
IR @ VRWM
MAXIMUM
SURGE
CURRENT
(NOTE 1)
IFSM
MAXIMUM
REVERSE
RECOVERY
(NOTE 2)
trr
VOLTS
AMPS
VOLTS
A
AMPS
Sec.
55
oC
25
oC
150
oC
1N4245
1N4246
1N4247
1N4248
1N4249
200
400
600
800
1000
240
480
720
960
1150
1.00
1.3
1.0
150
25
5.0
NOTE 1: IO = 1A, 8 ms surge
NOTE 2: IF = 0.5A, IRM = 1A, IR(REC) = .250A
相关PDF资料
PDF描述
JANTXV1N4248 1 A, SILICON, SIGNAL DIODE
JANTXV1N4247 1 A, SILICON, SIGNAL DIODE
JANTX1N4246 1 A, SILICON, SIGNAL DIODE
JANTX1N4248 1 A, SILICON, SIGNAL DIODE
JANTX1N4247 1 A, SILICON, SIGNAL DIODE
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