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参数资料
| 型号： | JANTXV1N4944 |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, SILICON, SIGNAL DIODE |
| 封装： | SIMILAR TO DO-41, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 262K |
| 代理商： | JANTXV1N4944 |
IFIERS
VOIDLESS-HERMETICALLY SEALED
FAST RECOVERY GLASS RECT
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2004
12-08-2004 REV A
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SCOTTSD A L E DIVISION
1N4942 thru 1N4948
1N4942
thru
1N4948
DESCRIPTION
APPEARANCE
This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/359
and is ideal for high-reliability applications where a failure cannot be tolerated.
These industry-recognized 1.0 Amp rated rectifiers for working peak reverse
voltages from 200 to 1000 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
similar in ratings to the 1N5615 thru 1N5623 series where surface mount MELF
package configurations are also available by adding a “US” suffix (see separate
data sheet for 1N5615US thru 1N5623US). Microsemi also offers numerous other
rectifier products to meet higher and lower current ratings with various recovery time
speed requirements including fast and ultrafast device types in both through-hole
and surface mount packages.
“A” Package
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Popular JEDEC registered 1N4942 to 1N4948 series
Voidless hermetically sealed glass package
Triple-Layer Passivation
Internal “Category I” Metallurgical bonds
Working Peak Reverse Voltage 200 to 1000 Volts.
JAN, JANTX, and JANTXV available per MIL-PRF-
19500/359 (for JANS, see 1N5615 thru 1N5623)
Surface mount equivalents also available in a square
end-cap MELF configuration with “US” suffix (see
separate data sheet for 1N5615US thru 1N5623US)
Fast recovery 1 Amp rectifiers 200 to 1000 V
Military and other high-reliability applications
General rectifier applications including bridges, half-
bridges, catch diodes, etc.
High forward surge current capability
Extremely robust construction
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Junction & Storage Temperature: -65oC to +175oC
Thermal Resistance: 38oC/W junction to lead at 3/8
inch (10 mm) lead length from body
Thermal Impedance: 4.5oC/W @ 10 ms heating time
Average Rectified Forward Current (IO): 1.0 Amps @
TA = 55C and 0.750 Amps at TA = 100C
Forward Surge Current: 15 Amps @ 8.3 ms half-sine
Solder Temperatures: 260C for 10 s (maximum)
CASE: Hermetically sealed voidless hard glass with
Tungsten slugs
TERMINATIONS: Axial leads are copper with
Tin/Lead (Sn/Pb) finish
MARKING: Body paint and part number, etc.
POLARITY: Cathode band
TAPE & REEL option: Standard per EIA-296
WEIGHT: 340 mg
See package dimensions on last page
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
MINIMUM
BREAKDOWN
VOLTAGE
BV @ 50A
AVERAGE
RECTIFIED
CURRENT
IO
MAXIMUM
FORWARD
VOLTAGE
VF @ 1 A
MAXIMUM
REVERSE
CURRENT
IR @ VRWM
Maximum
CAPACITANCE
C @ -12V
MAXIMUM
SURGE
CURRENT
(NOTE 1)
IFSM
MAXIMUM
REVERSE
RECOVERY
(NOTE 2)
trr
VOLTS
AMPS
VOLTS
A
pF
AMPS
ns
55
oC
100
oC
25
oC
150
oC
JAN1N4942
JAN1N4944
JAN1N4946
JAN1N4947
JAN1N4948
200
400
600
800
1000
220
440
660
880
1100
1.00
.750
1.3
1.0
200
45
35
25
20
15
150
250
500
NOTE 1: TA = 100
oC, 8.3 ms surges
NOTE 2: IF = 0.5A, IRM = 1A, IR(REC) = .250A
相关PDF资料 |
PDF描述 |
|---|---|
| JANTXV1N4942 | 1 A, SILICON, SIGNAL DIODE |
| JANTX1N4948 | 1 A, SILICON, SIGNAL DIODE |
| JANTX1N4947 | 1 A, SILICON, SIGNAL DIODE |
| JANTX1N4944 | 1 A, SILICON, SIGNAL DIODE |
| JANTXV1N4946 | 1 A, SILICON, SIGNAL DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JANTXV1N4946 | 制造商:Microsemi Corporation 功能描述:Diode Switching 600V 1A 2-Pin Case A 制造商:Microsemi Corporation 功能描述:FAST RECOVERY RECTFR 600V 1A 2PIN A - Bulk 制造商:Microsemi 功能描述:Diode Switching 600V 1A 2-Pin Case A |
| JANTXV1N4954 | 制造商:Microsemi Corporation 功能描述:ZENER SGL 6.8V 5% 5W 2PIN E - Bulk |
| JANTXV1N4954CUS | 功能描述:Zener Diode 6.8V 5W ±2% Surface Mount D-5B 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/356 包装:散装 零件状态:在售 电压 - 齐纳（标称值）（Vz）:6.8V 容差:±2% 功率 - 最大值:5W 阻抗（最大值）（Zzt）:1 欧姆 不同?Vr 时的电流 - 反向漏电流:150μA @ 5.2V 不同 If 时的电压 - 正向（Vf）:1.5V @ 1A 工作温度:-65°C ~ 175°C 安装类型:表面贴装 封装/外壳:SQ-MELF，E 供应商器件封装:D-5B 标准包装:1 |
| JANTXV1N4954DUS | 功能描述:Zener Diode 6.8V 5W ±1% Surface Mount D-5B 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/356 包装:散装 零件状态:在售 电压 - 齐纳（标称值）（Vz）:6.8V 容差:±1% 功率 - 最大值:5W 阻抗（最大值）（Zzt）:1 欧姆 不同?Vr 时的电流 - 反向漏电流:150μA @ 5.2V 不同 If 时的电压 - 正向（Vf）:1.5V @ 1A 工作温度:-65°C ~ 175°C 安装类型:表面贴装 封装/外壳:SQ-MELF，E 供应商器件封装:D-5B 标准包装:1 |
| JANTXV1N4954US | 制造商:Microsemi Corporation 功能描述:Diode Zener Single 6.8V 5% 5W 2-Pin E-MELF 制造商:Microsemi Corporation 功能描述:ZENER VOLTAGE REGULATOR DIODE (ZEN) - Trays |
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