收藏本站
参数资料
型号： JANTXV1N5534BUR-1TR
厂商： MICROSEMI CORP-SCOTTSDALE
元件分类： 齐纳二极管
英文描述： 14 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
封装： HERMETIC SEALED, GLASS, MLL34, MELF-2
文件页数： 2/3页
文件大小： 182K
代理商： JANTXV1N5534BUR-1TR
Low Voltage Surface Mount
500 mW Avalanche Diodes
SCOTTSD A L E DIVISION
IN5518BUR-1 thru 1N5546BUR-1
(or MLL5518B-1 thru MLL5546B-1)
W
.Mi
cr
os
em
i
.C
O
M
1N5
518
BUR
–
1N5
546
BUR
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted. Based on DC measurements at
thermal equilibrium; VF = 1.1 Max @ IF = 200 mA for all types.)
MAX. REVERSE CURRENT
(Note 4)
VR – VOLTS
JEDEC TYPE
NUMBER
(Note 1 and
Note 7)
NOMINAL
ZENER
VOLTAGE
VZ @ IZT
(Note 2)
VOLTS
TEST
CURRENT
IZT
mAdc
MAX. ZENER
IMPEDANCE
B-C-D SUFFIX
ZZT @ IZT
(Note 3)
OHMS
IR
Adc
NON & A-
SUFFIX
B-C-D
SUFFIX
B-C-D
SUFFIX
MAXIMUM
DC ZENER
CURRENT
IZM
(Note 5)
mAdc
B-C-D SUFFIX
MAX. NOISE
DENSITY
AT IZ = 250A
ND
V/ √Hz
REGULATION
FACTOR
VZ
(Note 6)
VOLTS
LOW VZ
CURRENT
IZL
(Note 6)
mAdc
1N5518BUR-1
1N5519BUR-1
1N5520BUR-1
1N5521BUR-1
1N5522BUR-1
3.3
3.6
3.9
4.3
4.7
20
10
26
24
22
18
22
5.0
3.0
1.0
3.0
2.0
0.90
1.0
1.5
1.0
1.5
2.0
115
105
98
88
81
0.5
0.90
0.85
0.75
0.60
2.0
1.0
1N5523BUR-1
1N5524BUR-1
1N5525BUR-1
1N5526BUR-1
1N5527BUR-1
5.1
5.6
6.2
6.8
7.5
5.0
3.0
1.0
26
30
35
2.0
1.0
0.5
2.0
3.0
4.5
5.5
6.0
2.5
3.5
5.0
6.2
6.8
75
68
61
56
51
0.5
1.0
2.0
0.65
0.30
0.20
0.10
0.05
0.25
0.01
1N5528BUR-1
1N5529BUR-1
1N5530BUR-1
1N5531BUR-1
1N5532BUR-1
8.2
9.1
10.0
11.0
12.0
1.0
40
45
60
80
90
0.5
0.1
0.05
6.5
7.0
8.0
9.0
9.5
7.5
8.2
9.1
9.9
10.8
46
42
38
35
32
4.0
5.0
10
0.05
0.10
0.20
0.01
1N5533BUR-1
1N5534BUR-1
1N5535BUR-1
1N5536BUR-1
1N5537BUR-1
13.0
14.0
15.0
16.0
17.0
1.0
90
100
0.01
10.5
11.5
12.5
13.0
14.0
11.7
12.6
13.5
14.4
15.3
29
27
25
24
22
15
20
0.20
0.01
1N5538BUR-1
1N5539BUR-1
1N5540BUR-1
1N5541BUR-1
1N5542BUR-1
18.0
19.0
20.0
22.0
24.0
1.0
100
0.01
15.0
16.0
17.0
18.0
20.0
16.2
17.1
18.0
19.8
21.6
21
20
19
17
16
20
0.20
0.25
0.30
0.01
1N5543BUR-1
1N5544BUR-1
1N5545BUR-1
1N5546BUR-1
25.0
28.0
30.0
33.0
1.0
100
0.01
21.0
23.0
24.0
28.0
22.4
25.2
27.0
29.7
15
14
13
12
20
0.35
0.40
0.45
0.50
0.01
NOTES:
1.
TOLERANCE AND VOLTAGE DESIGNATION –
The JEDEC type numbers without a letter prior to the UR-1 suffix are +/-20% with guaranteed limits for only VZ, IR, and VF.
Units with “A” prior to the UR-1 suffix are +/-10% with guaranteed limits for VZ, IR, and VF. Units with guaranteed limits for all six
parameters are indicated by a B suffix for +/-5.0% units, C suffix for +/-2.0% and D suffix for +/-1.0% prior to the UR-1 suffix.
2.
ZENER VOLTAGE (VZ) MEASUREMENT –
Nominal zener voltage is measured with the device junction in thermal equilibrium with ambient temperature of 25
oC.
3.
ZENER IMPEDANCE (ZZ) MEASUREMENT –
The zener impedance is derived from the 60 Hz ac voltage, which results when an ac current having an rms value equal to 10%
of the dc zener current (IZT) is superimposed on IZT.
4.
REVERSE CURRENT (IR) –
Reverse currents are guaranteed and are measured at VR as shown on the table.
5.
MAXIMUM REGULATOR CURRENT (IZM) –
The maximum current shown is as shown in MIL-PRF-19500/437.
6.
MAXIMUM REGULATION FACTOR (
VZ) –
VZ is the maximum difference between VZ at IZT and VZ at IZL measured with the device junction in thermal equilibrium.
7.
PART NUMBER – These may be ordered as either 1N5518BUR-1 thru 1N5546BUR-1 or as MLL5518B-1 thru MLL5546B-1 part
numbers. For military types, use the 1NxxxUR-1 format and also include JAN, JANTX, or JANTXV prefix for desired screening
level, e.g. JANTX1N5518BUR-1, JANTXV1N5532BUR-1, JANTXV1N5534CUR-1, JANTXV1N5545DUR-1, etc.
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright
2003
10-31-2003 REV B
相关PDF资料
PDF描述
JAN1N6138 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
JANTXV1N6138A 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
JANTXV1N6125US 500 W, BIDIRECTIONAL, SILICON, TVS DIODE
JANTXV1N6164US 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
JAN1N6115AUS 500 W, BIDIRECTIONAL, SILICON, TVS DIODE
相关代理商/技术参数
参数描述
JANTXV1N5534C-1 功能描述:Zener Diode 14V 500mW ±2% Through Hole DO-35 (DO-204AH) 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/437 包装:散装 零件状态:在售 电压 - 齐纳（标称值）（Vz）:14V 容差:±2% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:100 欧姆 不同?Vr 时的电流 - 反向漏电流:10nA @ 12.6V 不同 If 时的电压 - 正向（Vf）:1.1V @ 200mA 工作温度:-65°C ~ 175°C 安装类型:通孔 封装/外壳:DO-204AH，DO-35，轴向 供应商器件封装:DO-35（DO-204AH） 标准包装:1
JANTXV1N5534CUR-1 功能描述:Zener Diode 14V 500mW ±2% Surface Mount DO-213AA 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/437 包装:散装 零件状态:在售 电压 - 齐纳（标称值）（Vz）:14V 容差:±2% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:100 欧姆 不同?Vr 时的电流 - 反向漏电流:10nA @ 12.6V 不同 If 时的电压 - 正向（Vf）:1.1V @ 200mA 工作温度:-65°C ~ 175°C 安装类型:表面贴装 封装/外壳:DO-213AA（玻璃） 供应商器件封装:DO-213AA 标准包装:1
JANTXV1N5534D-1 功能描述:Zener Diode 14V 500mW ±1% Through Hole DO-35 (DO-204AH) 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/437 包装:散装 零件状态:在售 电压 - 齐纳（标称值）（Vz）:14V 容差:±1% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:100 欧姆 不同?Vr 时的电流 - 反向漏电流:10nA @ 12.6V 不同 If 时的电压 - 正向（Vf）:1.1V @ 200mA 工作温度:-65°C ~ 175°C 安装类型:通孔 封装/外壳:DO-204AH，DO-35，轴向 供应商器件封装:DO-35（DO-204AH） 标准包装:1
JANTXV1N5534DUR-1 功能描述:Zener Diode 14V 500mW ±1% Surface Mount DO-213AA 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/437 包装:散装 零件状态:在售 电压 - 齐纳（标称值）（Vz）:14V 容差:±1% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:100 欧姆 不同?Vr 时的电流 - 反向漏电流:10nA @ 12.6V 不同 If 时的电压 - 正向（Vf）:1.1V @ 200mA 工作温度:-65°C ~ 175°C 安装类型:表面贴装 封装/外壳:DO-213AA（玻璃） 供应商器件封装:DO-213AA 标准包装:1
JANTXV1N5535B-1 制造商:Aeroflex 功能描述:Diode Zener Single 15V 5% 500mW 2-Pin DO-35 制造商:Aeroflex / Metelics 功能描述:LOW VOLTAGE AVALANCHE ZENER - Bulk 制造商:Microsemi Corporation 功能描述:ZENER SGL 15V 5% 417MW 2PIN DO-204AA - Bulk
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*