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参数资料
| 型号： | JANTXV1N5802US |
| 元件分类： | 整流器 |
| 英文描述： | 2.5 A, 50 V, SILICON, RECTIFIER DIODE |
| 封装： | HERMETIC SEALED PACKAGE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 52K |
| 代理商： | JANTXV1N5802US |
POWER DISCRETES
1
www.semtech.com
1N5802US/1N5804US/1N5806US
Superfast Recovery Diodes
Surface Mount (US)
Features
Revision: May 26, 2006
Quick reference data
V
R 50 -150 V
I
F 1N5802US to 1N5806US = 2.5A
t
rr 1N5802US to 1N5806US = 25nS
I
R
1N5802US to 1N5806US = 1A
u Very low reverse recovery time
u Hermetically sealed non-cavity construction
u Soft, non-snap, off recovery characteristics
u Very low forward voltage drop
Electrical Specifications
Electrical specifications @ T
A = 25°C unless otherwise specified.
Symbol
1N5802US
1N5804US
1N5806US
Units
Working Reverse Voltage
V
RWM
50
100
150
V
Repetitive Reverse Voltage
V
RRM
50
100
150
V
Average Forward Current
(@ 75°C lead length = 0.375')
I
F(AV)
2.5
A
Repetitive Surge Current
(@ 55°C lead length = 0.375')
I
FRM
14
A
Non-Repetitive Surge Current
(tp = 8.3mS @ Vr & T
JMAX)
I
FSM
35
A
Storage Temperature Range
T
STG
-65 to +175
°C
Average Forward Current Max
(pcb mounted: T
A = 55°C)
Sine wave
Square wave (d = 0.5)
I
F(AV)
I
F(AV)
1.0
1.1
A
I2t for fusing (t = 8.3mS) max
I2t
10
A2S
Forward Voltage Drop max
@ T
J = 25°C
V
F
0.875 @ 1A
V
Reverse Current max
@ V
WRM,
T
J = 25°C
@ V
WRM, TJ = 100°C
I
R
I
R
1.0
50
A
Reverse Recovery Time max
(1.0A I
F to 1.0A IRM recover to 0.25A IRM(REC))
trr
25
nS
Junction Capacitance typ
@ V
R = 5V f = 1MHz
C
J
25
pF
Thermal Resistance to end cap
R θ
JEC
13
°C/W
Description
These products are qualified to MIL-PRF-19500/477
and are preferred parts as listed in MIL-HDBK-5961.
They can be supplied fully released as JANTX, JANTXV
and JANS versions.
相关PDF资料 |
PDF描述 |
|---|---|
| JANS1N5806US | 2.5 A, 150 V, SILICON, RECTIFIER DIODE |
| JANTX1N5806US | 2.5 A, 150 V, SILICON, RECTIFIER DIODE |
| JANTX1N5804US | 2.5 A, 100 V, SILICON, RECTIFIER DIODE |
| JANTXV1N5807US | 3 A, SILICON, RECTIFIER DIODE |
| JANTX1N5811US | 3 A, 150 V, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JANTXV1N5804 | 制造商:Microsemi Corporation 功能描述:Diode Switching 100V 2.5A 2-Pin Case A 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECTIFIER (LESS THAN 100NS) (UFR) - Bulk 制造商:Microsemi 功能描述:Diode Switching 100V 2.5A 2-Pin Case A |
| JANTXV1N5804URS | 功能描述:Diode Standard 100V 1A Surface Mount A-MELF 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/477 包装:散装 零件状态:在售 二极管类型:标准 电压 - DC 反向（Vr）（最大值）:100V 电流 - 平均整流（Io）:1A 不同 If 时的电压 - 正向（Vf）:875mV @ 1A 速度:快速恢复 = 200mA（Io） 反向恢复时间（trr）:25ns 不同?Vr 时的电流 - 反向漏电流:1μA @ 100V 不同?Vr，F 时的电容:25pF @ 10V，1MHz 安装类型:表面贴装 封装/外壳:SQ-MELF，A 供应商器件封装:A-MELF 工作温度 - 结:-65°C ~ 175°C 标准包装:1 |
| JANTXV1N5804US | 制造商:Microsemi Corporation 功能描述:Diode Switching 100V 2.5A 2-Pin A-MELF T/R 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECTIFIER (LESS THAN 100NS) (UFR) - Trays |
| JANTXV1N5806 | 制造商:Microsemi Corporation 功能描述:Diode Switching 150V 2.5A 2-Pin Case A 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECTIFIER (LESS THAN 100NS) (UFR) - Bulk |
| JANTXV1N5806URS | 功能描述:Diode Standard 150V 1A Surface Mount A-MELF 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/477 包装:散装 零件状态:在售 二极管类型:标准 电压 - DC 反向（Vr）（最大值）:150V 电流 - 平均整流（Io）:1A 不同 If 时的电压 - 正向（Vf）:875mV @ 1A 速度:快速恢复 = 200mA（Io） 反向恢复时间（trr）:25ns 不同?Vr 时的电流 - 反向漏电流:1μA @ 150V 不同?Vr，F 时的电容:25pF @ 10V，1MHz 安装类型:表面贴装 封装/外壳:SQ-MELF，A 供应商器件封装:A-MELF 工作温度 - 结:-65°C ~ 175°C 标准包装:1 |
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