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参数资料
| 型号： | JANTXV1N5812R |
| 厂商： | MICROSEMI CORP |
| 元件分类： | 整流器 |
| 英文描述： | 20 A, SILICON, RECTIFIER DIODE, DO-4 |
| 封装： | DO-4, 1 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 56K |
| 代理商： | JANTXV1N5812R |
TECHNICAL DATA
FAST RECOVERY POWER RECTIFIER
Qualified per MIL-PRF-19500/478
Devices
Qualified Level
1N5812
1N5812R
1N5814
1N5814R
1N5815
1N5815R
1N5816
1N5816R
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
1N5812
1N5812R
1N5814
1N5814R
1N5816
1N5816R
Unit
Reverse Voltage
VR
50
100
150
Vdc
Working Peak Reverse Voltage
VRWM
50
100
150
Vpk
Average Forward Current
TC = +100
0C (1)
IO
20
Adc
Forward Current Surge Peak
TC = +100
0C
tp = 8.3 ms
IFSM
400
Adc
Reverse Recovery Time
trr
35
ηs
Operating & Storage Junction Temperature
TJ, Tstg
-65 to +175
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
1.5
0C/W
1) Derate linearly 250 mA/
0C from +1000C to +1500C, & 300 mA/0C above +1500C
*See appendix A for
ELECTRICAL CHARACTERISTICS
package outline
Characteristics
Symbol
Min.
Max.
Unit
Thermal Impedance
IH
≥ rated I
O; tH
≤ 250ms; 10 mA ≤ I
M
≤ 100 mA; t
MD = 250
s (max)
ZθJX
1.35
0C/W
Forward Voltage
tp ≤ 8.3 ms, duty cycle ≤ 2.0% pulsed
IF = 10 A (pk)
IF = 20 A (pk)
VF1
VF2
0.860
0.950
Vdc
Vpk
Reverse Current
VR = Rated VR (See 1.3 of MIL-PRF-19500/478)
IR
10
Adc
Breakdown Voltage
IR = 100
Adc
1N5812, R
IR = 100
Adc
1N5814, R
IR = 100
Adc
1N5816, R
V(BR)
60
110
160
Vdc
Junction Capacitance
VR = 10 Vdc, VSIG = 50 mVdc (p-p) max, f = 1.0 MHz
CJ
300
pF
Forward Recovery Voltage
tp ≥ 20 ηs, tr = 8.0 ηs; IF = 1,000 mA
VFR
2.2
V(pk)
Forward Recovery Time
IF = 1,000 mA
trr
15
ηs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 1
DO-203AA
(DO-4)
相关PDF资料 |
PDF描述 |
|---|---|
| JAN1N5812R | 20 A, SILICON, RECTIFIER DIODE, DO-4 |
| JAN1N5816 | 20 A, SILICON, RECTIFIER DIODE, DO-4 |
| JANTXV1N5814 | 20 A, SILICON, RECTIFIER DIODE, DO-4 |
| JAN1N5812 | 20 A, SILICON, RECTIFIER DIODE, DO-4 |
| JAN1N5814 | 20 A, SILICON, RECTIFIER DIODE, DO-4 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JANTXV1N5814 | 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECOVERY RECTFR 100V 20A 2PIN DO-4 - Bulk |
| JANTXV1N5814R | 制造商:Microsemi Corporation 功能描述:FAST RECOVERY RECTFR 100V 20A 2PIN DO-4 - Bulk |
| JANTXV1N5816 | 制造商:Microsemi Corporation 功能描述:Diode Switching 150V 20A 2-Pin DO-4 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECOVERY RECTFR 150V 20A 2PIN DO-4 - Bulk |
| JANTXV1N5816R | 制造商:Microsemi Corporation 功能描述:FAST RECOVERY RECTFR 150V 20A 2PIN DO-4 - Bulk |
| JANTXV1N58191 | 制造商:n/a 功能描述:1N5819 |
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