参数资料
型号: JANTXV1N5822US
厂商: MICROSEMI CORP
元件分类: 整流器
英文描述: 3 A, 40 V, SILICON, RECTIFIER DIODE
封装: HERMETIC SEALED, D-5B, 2 PIN
文件页数: 1/2页
文件大小: 37K
代理商: JANTXV1N5822US
6
LAKE
STREET,
LAWRENCE,
MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
149
CDI
WORKING PEAK
MAXIMUM REVERSE
TYPE
REVERSE
MAXIMUM FORWARD VOLTAGE
LEAKAGE CURRENT
NUMBER
VOLTAGE
AT RATED VOLTAGE
V
RWM
V
F @ 1.0A
V
F @ 3.0A
V
F @ 9.4A
I
R @ 25°C
I
R @ 100°C
VOLTS
mA
1N5820US
20
0.40
0.50
0.70
0.10
12.5
1N5821US
30
0.40
0.50
0.70
0.10
12.5
1N5822US
40
0.40
0.50
0.70
0.10
12.5
J,JX, JV & JS
40
0.40
0.50
0.70
0.10
12.5
5822US
1N5822US AVAILABLE IN
JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/620
3 AMP SCHOTTKY BARRIER RECTIFIERS
HERMETICALLY SEALED
LEADLESS PACKAGE FOR SURFACE MOUNT
METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION
DESIGN DATA
CASE: D-5B, Hermetically sealed glass
case, PER MIL-PRF 19500/620
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
10 C/W maximum at L = 0 inch
THERMAL IMPEDANCE: (ZOJX): 3
C/W maximum
POLARITY: Cathode end is banded.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / °C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
MAXIMUM RATINGS
Operating Temperature: -65°C to +125°C
Storage Temperature: -65°C to +150°C
Average Rectified Forward Current: 3.0 AMP, TEC = +55°C
Derating: 43 mA / °C above TEC = +55°C
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
1N5820US
thru
1N5822US
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN MAX
D
3.48
3.76
.137
.148
F
0.48
0.71
0.019 0.028
G
5.08
5.72
.200
.225
S
0.03MIN.
.001MIN.
FIGURE 1
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JANS1N5822US 3 A, 40 V, SILICON, RECTIFIER DIODE
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