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参数资料
| 型号： | JANTXV1N645-1 |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.15 A, SILICON, SIGNAL DIODE, DO-35 |
| 封装： | SIMILAR TO DO-35, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 67K |
| 代理商： | JANTXV1N645-1 |
FIGURE 1
DESIGN DATA
CASE: Hermetically sealed glass
case. DO – 35 outline.
LEAD MATERIAL: Copper clad steel.
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
250 C/W maximum
THERMAL IMPEDANCE: (ZOJX): 35
C/W maximum
POLARITY: Cathode end is banded.
MOUNTING POSITION: ANY.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
AVAILABLE IN
JAN, JANTX, AND JANTXV
PER MIL-PRF-19500/240
SILICON RECTIFIER
METALLURGICALLY BONDED
1N645-1
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 400 mA @ 25°C
150 mA @ 150°C
Derating: 2.0 mA/°C From 25°C to 150°C
6.0 mA/°C From 150°C to 175°C
TYPE
VRSM
V RWM
I FSM
V F
CAP @
TP = 1/120 s
@400mA
V R = 4V
TA = 25°C
V (pk)
A
V DC
pF
1N645-1
270225
5
0
.8 - 1.0
20
TYPE
I R1 at V RWM I R2 at V RWM I R3 at V RSM
TA = 25°C
TA = 150°C
TA = 25°C
A
1N645-1
0.05
25
50
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相关代理商/技术参数 |
参数描述 |
|---|---|
| JANTXV1N645UR-1 | 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 225V 0.4A 2PIN DO-213AA - Trays |
| JANTXV1N6461 | 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 5V 500W 2PIN E - Bulk 制造商:Microsemi Corporation 功能描述:TVS DIODE 5VWM 9VC BPKG AXIAL 制造商:Microsemi Corporation 功能描述:TVS 500W B-PKG AXIAL |
| JANTXV1N6461US | 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 5V 500W 2PIN MELF - Trays |
| JANTXV1N6462 | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR (TVS) - Bulk |
| JANTXV1N6462US | 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 6V 500W 2PIN MELF - Trays |
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