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参数资料
| 型号： | JANTXV1N6461US |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | HERMETICALLY SEALED, GLASS, D-5B, MELF-2 |
| 文件页数： | 3/3页 |
| 文件大小： | 145K |
| 代理商： | JANTXV1N6461US |
Voidless-Hermetically-Sealed Surface
Mount Unidirectional Transient
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
Copyright
2007
4-27-2007 REV B
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N6461US thru 1N6468US
1N6
461
US
–
1N6
468
US
FIGURE 3
T – Temperature –
oC
8/20 s CURRENT IMPULSE WAVEFORM
(per MIL-PRF-19500/551
FIGURE 4
DERATING CURVE
PACKAGE DIMENSIONS Inches [mm]
E-MELF-PKG (D-5B)
Note: If mounting requires adhesive separate from the solder,
an additional 0.080 inch diameter contact may be placed in the
center between the pads as an optional spot for cement as
shown in the pad layout.
Peak
Pulse
Power
(Ppp
),
Curren
t(Ipp
),
And
DC
Pow
e
rin
Percent
of
25
o
C
Rati
n
g
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