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参数资料
| 型号： | JANTXV1N6463US |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | HERMETICALLY SEALED, GLASS, D-5B, MELF-2 |
| 文件页数： | 2/3页 |
| 文件大小： | 145K |
| 代理商： | JANTXV1N6463US |
Voidless-Hermetically-Sealed Surface
Mount Unidirectional Transient
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright
2007
4-27-2007 REV B
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N6461US thru 1N6468US
1N6
461
US
–
1N6
468
US
ELECTRICAL CHARACTERISTICS
TYPE
BREAK
DOWN
VOLTAGE
V(BR)
MIN.
BREAKDOWN
CURRENT
I (BR)
WORKING
PEAK
VOLTAGE
VWM
MAX
LEAKAGE
CURRENT
ID
MAXIMUM
CLAMPING
VOLTAGE
VC
@ 10/1000 s
MAXIMUM
PEAK PULSE
CURRENT
IPP
@8/20 s
@10/1000 s
MAXIMUM
TEMP.
COEF. OF
V(BR)
Volts
mAdc
Vdc
μAdc
V(pk)
A(pk)
%/
oC
1N6461US
5.6
25
5
3000
9.0
315
56
-.03, +0.04
1N6462US
6.5
20
6
2500
11.0
258
46
0.06
1N6463US
13.6
5
12
500
22.6
125
22
0.085
1N6464US
16.4
5
15
500
26.5
107
19
0.085
1N6465US
27.0
2
24
50
41.4
69
12
.096
1N6466US
33.0
1
30.5
3
47.5
63
11
.098
1N6467US
43.7
1
40.3
2
63.5
45
8
.101
1N6468US
54.0
1
51.6
2
78.5
35
6
.103
SYMBOLS & DEFINITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VWM
Working Peak Voltage: The maximum peak voltage that can be applied over the operating temperature range.
This is also referred to as Standoff Voltage.
ID
Maximum Standoff Current: The maximum current that will flow at the specified voltage and temperature.
VC
Maximum clamping voltage at specified IPP (Peak Pulse Current) at the specified pulse conditions.
PPP
Peak Pulse Power: The peak power dissipation resulting from the peak impulse current IPP.
GRAPHS
FIGURE 1
FIGURE 2
PEAK PULSE POWER vs. PULSE TIME
10/1000 s CURRENT IMPULSE WAVEFORM
相关PDF资料 |
PDF描述 |
|---|---|
| JANTXV1N6461US | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| JANTX1N6465US | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| JANTXV1N6466US | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| JANTX1N6463US | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| JANTXV1N6462US | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JANTXV1N6464 | 制造商:Microsemi Corporation 功能描述:Diode TVS Single Uni-Dir 15V 500W 2-Pin Case E 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 15V 500W 2PIN E - Bulk |
| JANTXV1N6464US | 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 15V 500W 2PIN MELF - Trays |
| JANTXV1N6465 | 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 24V 500W 2PIN E - Bulk 制造商:Microsemi Corporation 功能描述:TVS 500W B-PKG AXIAL 制造商:Microsemi Corporation 功能描述:TVS DIODE 24VWM 41.4VC BPKG AXL |
| JANTXV1N6465US | 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 24V 500W 2PIN MELF - Trays 制造商:Microsemi Corporation 功能描述:TVS 500W B SQ-MELF SMD |
| JANTXV1N6466 | 制造商:Microsemi Corporation 功能描述:Diode TVS Single Uni-Dir 30.5V 500W 2-Pin Case E 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 30.5V 500W 2PIN E - Bulk |
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