参数资料
型号: JANTXV1N6464
厂商: MICROSEMI CORP
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
封装: GLASS, E PACKAGE, 2 PIN
文件页数: 1/3页
文件大小: 217K
代理商: JANTXV1N6464
Voidless-Hermetically-Sealed Unidirectional
Transient Suppressors
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2008
6-11-2008 REV C
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N6461 thru 1N6468
1N6
461
1
N
6468
1N6
469
1
N
6476
DESCRIPTION
APPEARANCE
This
series
of
industry
recognized
voidless-hermetically-sealed
Unidirectional
Transient Voltage Suppressor (TVS) designs is military qualified to MIL-PRF-
19500/551 and are ideal for high-reliability applications where a failure cannot be
tolerated. They provide a Working Peak “Standoff” Voltage selection from 5.0 to 51.6
Volts with 500 W ratings. They are very robust in hard-glass construction and also use
an internal metallurgical bond identified as Category I for high reliability applications.
The 500 W series is military qualified to MIL-PRF-19500/551. These devices are also
available in a surface mount MELF package configuration by adding a “US” suffix (see
separate data sheet for 1N6461US thru 1N6468US). Microsemi also offers numerous
other TVS products to meet higher and lower peak pulse power and voltage ratings in
both through-hole and surface-mount packages.
“E” Package
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
High surge current and peak pulse power provides
transient voltage protection for sensitive circuits
Triple-layer passivation
Internal “Category I” metallurgical bonds
Voidless hermetically sealed glass package
JAN/TX/TXV military qualifications available per MIL-
PRF-19500/551 by adding JAN, JANTX, or JANTXV
prefix
Further options for screening in accordance with MIL-
PRF-19500 for JANS by using a “SP” prefix, e.g.
SP6462, SP6468, etc.
Surface Mount equivalents are also available in a
square-end-cap MELF configuration with a “US” suffix
(see separate data sheet)
Military and other high reliability transient protection
Extremely robust construction
Working Peak “Standoff” Voltage (V
WM) from 5.0 to
51.6 V
Available as 500 W Peak Pulse Power (P
PP)
ESD and EFT protection per IEC61000-4-2 and
IEC61000-4-4 respectively
Secondary lightning protection per select levels in
IEC61000-4-5
Flexible axial-leaded mounting terminals
Nonsensitive to ESD per MIL-STD-750 Method
1020
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Operating & Storage Temperature: -55oC to +175oC
Peak Pulse Power at 25oC: 500 Watts @ 10/1000 s
(also see Figures 1,2 and 4)
Impulse repetition rate (duty factor): 0.01%
Forward Surge Current: 80 Amps@ 8.33 ms one-half
sine wave
Forward Voltage: 1.5 V @ 1 Amp dc and 4.8 V at 100
Amps (pulsed)
Steady-State Power: 2.5 Watts @ T
A = 25
oC (see
note below and Figure 4)
Thermal Resistance @ 3/8 inch lead length: 60 oC/W
Solder Temperatures: 260oC for 10 s (maximum)
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb)
over copper
MARKING: Body painted and part number, etc.
POLARITY: Cathode band
Tape & Reel option: Standard per EIA-296
Weight: 750 mg
See package dimensions on last page
NOTE: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from
mounting point to ambient is sufficiently controlled where TJ(MAX) is not exceeded.
相关PDF资料
PDF描述
JANTXV1N6467 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
JANTX1N6466 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
JANTX1N6461 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
JANTXV1N6468 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
JANTXV1N6462 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
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