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参数资料
| 型号： | JANTXV1N6472US |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | HERMETICALLY SEALED, GLASS, D-5C, MELF-2 |
| 文件页数： | 2/3页 |
| 文件大小： | 179K |
| 代理商： | JANTXV1N6472US |
Voidless-Hermetically-Sealed Surface
Mount Unidirectional Transient
Suppressors
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N6469US thru 1N6476US
1N6
469
US
–
1N6
476
US
ELECTRICAL CHARACTERISTICS
TYPE
BREAK
DOWN
VOLTAGE
V(BR)
MIN.
BREAKDOWN
CURRENT
I (BR)
WORKING
PEAK
VOLTAGE
VWM
MAX
LEAKAGE
CURRENT
ID
MAXIMUM
CLAMPING
VOLTAGE
VC
@ 10/1000 s
MAXIMUM
PEAK PULSE
CURRENT
IPP
@8/20 s
@10/1000 s
MAXIMUM
TEMP.
COEF. OF
V(BR)
Volts
mAdc
Vdc
μAdc
V(pk)
A(pk)
%/
oC
1N6469US
5.6
50
5
1500
9.0
945
167
-.03, +0.04
1N6470US
6.5
50
6
1000
11.0
775
137
0.06
1N6471US
13.6
10
12
20
22.6
374
66
0.085
1N6472US
16.4
10
15
10
26.5
322
57
0.085
1N6473US
27.0
5
24
5
41.4
207
36.5
.096
1N6474US
33.0
1
30.5
5
47.5
181
32
.098
1N6475US
43.7
1
40.3
5
63.5
135
24
.101
1N6476US
54.0
1
51.6
5
78.5
107
19
.103
SYMBOLS & DEFINITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VWM
Working Peak Voltage: The maximum peak voltage that can be applied over the operating temperature range.
This is also referred to as Standoff Voltage.
ID
Maximum Standoff Current: The maximum current that will flow at the specified voltage and temperature.
VC
Maximum clamping voltage at specified IPP (Peak Pulse Current) at the specified pulse conditions.
PPP
Peak Pulse Power: The peak power dissipation resulting from the peak impulse current IPP.
GRAPHS
Pulse
current
(I
P
)in
percent
of
I
PP
Peak Value
IPP
Pulse time duration (tp) is
defined as that point where
IP decays to 50% of peak
value (IPP).
time (t) in milliseconds
FIG. 1 – Non-repetive peak pulse power rating curve
FIG. 2 Pulse wave form for exponential surge
NOTE: Peak power defined as peak voltage times peak current
for 10/1000 s
Microsemi
Scottsdale Division
Page 2
Copyright
2007
10-03-2007 REV D
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相关PDF资料 |
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| JANTX1N6471US | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
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相关代理商/技术参数 |
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|---|---|
| JANTXV1N6473 | 制造商:Microsemi Corporation 功能描述:Diode TVS Single Uni-Dir 24V 1.5KW 2-Pin Case G 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 24V 1.5KW 2PIN G - Bulk |
| JANTXV1N6473US | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Trays |
| JANTXV1N6474 | 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 30.5V 1.5KW 2PIN G - Bulk |
| JANTXV1N6474US | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Trays |
| JANTXV1N6475 | 制造商:Microsemi Corporation 功能描述:Diode TVS Single Uni-Dir 40.3V 1.5KW 2-Pin Case G 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 40.3V 1.5KW 2PIN G - Bulk |
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