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参数资料
| 型号： | JANTXV1N6622 |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 整流器 |
| 英文描述： | 1.2 A, SILICON, RECTIFIER DIODE, DO-41 |
| 封装： | HERMETIC SEALED, GLASS, A, 2 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 327K |
| 代理商： | JANTXV1N6622 |
VOIDLESS-HERMETICALLY SEALED
ULTRA FAST RECOVERY GLASS
RECTIFIERS
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N6620 thru 1N6625
1N6620
thru
1N6625
ELECTRICAL CHARACTERISTICS @ 25oC
MAXIMUM
REVERSE
CURRENT IR @
VRWM
IR
TYPE
NUMBER
MINIMUM
BREAK-
DOWN
VOLTAGE
VR
IR = 50μA
MAXIMUM
FORWARD
VOLTAGE
VF @ IF
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
TA=25
oC T
A=150
oC
MAXIMUM
REVERSE
RECOVERY
TIME (LOW
CURRENT)
trr
Note 1
MAXIMUM
REVERSE
RECOVERY
TIME (HIGH
CURRENT)
trr
Note 2
PEAK
RECOVERY
CURRENT
IRM (rec)
IF = 2A,
100A/
μs
Note 2
FORWARD
RECOVERY
VOLTAGE
VFRM Max
IF = 0.5A
tfr =12ns
V
V @ A
V
μA
ns
A
V
1N6620
220
1.40V @ 1.2A
1.60V @ 2.0A
200
0.5
150
30
45
3.5
12
1N6621
440
1.40V @ 1.2A
1.60V @ 2.0A
400
0.5
150
30
45
3.5
12
1N6622
660
1.40V @ 1.2A
1.60V @ 2.0A
600
0.5
150
30
45
3.5
12
1N6623
880
1.55V @ 1.0A
1.80V @ 1.5A
800
0.5
150
50
60
4.2
18
1N6624
990
1.55V @ 1.0A
1.80V @ 1.5A
900
0.5
150
50
60
4.2
18
1N6625
1100
1.75V @ 1.0A
1.95V @ 1.5A
1000
1.0
200
60
80
5.0
30
NOTE 1: Low Current Reverse Recovery Time Test Conditions: IF=0.5A, IRM=1.0A, IR(REC) = 0.25A per MIL-STD-750,
Method 4031, Condition B.
NOTE 2: High Current Reverse Recovery Time Test Conditions: IF = 2 A, di/dt=100 A/μs MIL-STD-750, Method 4031,
Condition D.
SYMBOLS & DEFINITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VRWM
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IR
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
C
Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads.
trr
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery decay point after a peak
reverse current is reached.
CHARTS AND GRAPHS
FIGURE 1
FIGURE 2
Typical Forward Current
vs
Forward Voltage
Microsemi
Scottsdale Division
Page 2
Copyright
2009
10-06-2009 REV C; SA7-55.pdf
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相关PDF资料 |
PDF描述 |
|---|---|
| JANTXV1N5622UL | 1 A, SILICON, SIGNAL DIODE |
| JAN1N6622 | 1.2 A, SILICON, RECTIFIER DIODE |
| JAN1N6623U | 1 A, SILICON, SIGNAL DIODE |
| JANTX1N6621U | 1.2 A, SILICON, RECTIFIER DIODE |
| JANTXV1N6624 | 1.5 A, SILICON, RECTIFIER DIODE, DO-41 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JANTXV1N6622U | 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECOVERY RECTFR 600V 1A 2PIN DO-7 - Bulk |
| JANTXV1N6622US | 制造商:Microsemi Corporation 功能描述:Diode Switching 660V 1.2A 2-Pin A-MELF 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECTIFIER (LESS THAN 100NS) (UFR) - Trays |
| JANTXV1N6623 | 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECTIFIER (LESS THAN 100NS) (UFR) - Bulk 制造商:Microsemi Corporation 功能描述:DIODE UFAST REC 880V 1A |
| JANTXV1N6623U | 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECOVERY RECTFR 800V 1A 2PIN DO-7 - Bulk |
| JANTXV1N6623US | 制造商:Microsemi Corporation 功能描述:Diode Switching 880V 1A 2-Pin A-MELF 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECTIFIER (LESS THAN 100NS) (UFR) - Trays 制造商:Microsemi Corporation 功能描述:DIODE UFAST REC 880V 1A |
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