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| 型号： | JANTXV1N6660DT1 |
| 厂商： | MICROSEMI CORP-LAWRENCE |
| 元件分类： | 整流器 |
| 英文描述： | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-254AA |
| 封装： | TO-254, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 173K |
| 代理商： | JANTXV1N6660DT1 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
DUAL SCHOTTKY POWER RECTIFIER
Qualified per MIL-PRF-19500/608
T4-LDS-0015 Rev. 2 (101670)
Page 1 of 2
DEVICES
LEVELS
1N6660
1N6660R
JAN
1N6660CCT1
1N6660CAT1
1N6660DT1
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)(Per Diode)
Parameters / Test Conditions
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
VRWM
45
V
Working Peak Reverse Voltage
VRRM
45
V
DC Blocking Voltage
VR
45
V
Average Forward Current, 25°C
Io
15
Note 1
Apk
Peak Surge Forward Current @ tp = 8.3ms, half
sinewave, Io = 0; VRM = 0
IFSM
300
Apk
Thermal Resistance, Junction to Case
Rθjc
1.65
°C/W
Thermal Resistance, Junction to Ambient
Rθja
40
°C/W
Operating Junction Temperature
Tj
-65°C to 150
°C
Storage Temperature
Tstg
-65°C to 150
°C
Note:
1. Derate linearly @ 300mA/°C from Tj = Tc = +100°C to 150°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERTICS
Forward Voltage
IF = 5A, Tj = 25°C*
IF = 15A, Tj = 25°C*
IF = 30A, Tj = 25°C*
IF = 15A, Tj = -55°C*
VF
0.55
0.75
1.0
0.80
V
Reverse Current
VR = 45V, Tj = 25°C
VR = 45V, Tj = 125°C
IR
1.0
40
mA
Junction Capacitance
VR = 5V
f = 1MHz
Cj
2000
pF
* Pulse test: Pulse width 300 sec, Duty cycle 2%
30 Amp / 45 Volts
COMMON CATHODE
OR
COMMON ANODE
SCHOTTKY RECTIFIER
TO-254
1
2
3
1N6660 & 1N6660CCT1
1
2
3
1N6660R & 1N6660CAT1
1
2
3
1N6660DT1
相关PDF资料 |
PDF描述 |
|---|---|
| JANTX1N6660CAT1 | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-254AA |
| JANTXV1N6660 | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-254AA |
| JANTX1N6660CCT1 | 30 A, 45 V, SILICON, RECTIFIER DIODE, TO-254AA |
| JANTXV1N6660CCT1 | 30 A, 45 V, SILICON, RECTIFIER DIODE, TO-254AA |
| JANS1N6660CCT1 | 30 A, 45 V, SILICON, RECTIFIER DIODE, TO-254AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JANTXV1N6660R | 功能描述:Diode Array 1 Pair Common Cathode Schottky 45V 15A Through Hole TO-254-3, TO-254AA (Straight Leads) 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/608 包装:散装 零件状态:在售 二极管配置:1 对共阴极 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:45V 电流 - 平均整流（Io）（每二极管）:15A 不同 If 时的电压 - 正向（Vf）:750mV @ 15A 速度:快速恢复 = 200mA（Io） 反向恢复时间（trr）:- 不同?Vr 时的电流 - 反向漏电流:1mA @ 45V 工作温度 - 结:-65°C ~ 150°C 安装类型:通孔 封装/外壳:TO-254-3，TO-254AA（直引线） 供应商器件封装:TO-254AA 标准包装:1 |
| JANTXV1N6661 | 制造商:Microsemi Corporation 功能描述:225V 0.5A 2PIN DO-35 - Bulk |
| JANTXV1N6661US | 制造商:Microsemi Corporation 功能描述:225V 0.5A 2PIN A-MELF - Trays |
| JANTXV1N6662 | 制造商:Microsemi Corporation 功能描述:400V 0.5A 2PIN DO-35 - Bulk |
| JANTXV1N6662US | 制造商:Microsemi Corporation 功能描述:400V 0.5A 2PIN B-MELF - Trays |
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