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参数资料
| 型号： | JANTXV1N6858UR-1 |
| 厂商： | MICROSEMI CORP-LAWRENCE |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.075 A, SILICON, SIGNAL DIODE, DO-213AA |
| 封装： | HERMETIC SEALED, LEADLESS, GLASS, LL34, MELF-2 |
| 文件页数： | 1/3页 |
| 文件大小： | 77K |
| 代理商： | JANTXV1N6858UR-1 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
SCHOTTKY BARRIER DIODES
– LEADLESS PACKAGE FOR SURFACE MOUNT
– METALLURGICALLY BONDED
– DOUBLE PLUG CONSTRUCTION
Qualified per MIL-PRF-19500/444
T4-LDS-0041 Rev. 1 (100246)
Page 1 of 3
DEVICES
1N5711UR-1
1N6857UR-1
CDLL2810
CDLL6263
1N5712UR-1
1N6858UR-1
CDLL5711
CDLL6857
CDLL5712
CDLL6858
QUALIFIED LEVELS
JAN
JANTX
JANTXV
MAXIMUM RATING AT 25°C
Operating
Temperature:
Storage Temperature:
Operating Current:
Derating:
-65°C to +150°C
5711 & 6263 types
2810, 5712 & 6858 types
6857 type
all types
:33mA dc @ TEC = +140°C
:75mA dc @ TEC = +130°C
:150mA dc @ TEC = +110°C
:Derate to 0 (zero) mA dc @ +150°C
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
NOTE:
1.
Effective Minority Carrier Lifetime (
τ) is 100 Pico Seconds
2.
Qualification testing to J, JX, JV and JS levels for 6857 and 6858 types is underway. Contact the
factory for qualification completion dates. These two part numbers are being introduced by CDI as
“drop-in” replacements for the 5711 and 5712. They provide a more robust mechanical design and a
higher ESDS class with the only trade-off being an increase in capacitance.
TYPE
NUMBER
MINIMUM
BEAKDOWN
VOLTAAGE
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
REVERSE
LEAKAGE
CURRENT
MAXIMUM
CAPACITANCE
@
VR = 0 VOLTS
f = 1.0MHz
ESDS
CLASS
VBR @ 10μA
VF @ 1mA
VF @ IF
IR @ VR
CT
VOLTS
@ mA
nA
VOLTS
PICO FARADS
1N5711UR-1
70
0.41
1.0 @ 15
200
50
2.0
1
1N5712UR-1
20
0.41
1.0 @ 35
150
16
2.0
1
1N6857UR-1
20
0.35
0.75 @ 35
150
16
4.5
2
1N6858UR-1
70
0.36
0.65 @ 15
200
50
4.5
2
CDLL2810
20
0.41
1.0 @ 35
100
15
2.0
1
CDLL5711
70
0.41
1.0 @ 15
200
50
2.0
1
CDLL5712
20
0.41
1.0 @ 35
150
16
2.0
1
CDLL6263
60
0.41
1.0 @ 15
200
50
2.2
1
CDLL6857
20
0.35
0.75 @ 35
150
16
4.5
2
CDLL6858
70
0.36
0.65 @ 15
200
50
4.5
2
FIGURE 1
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|---|---|
| JANTXCDLL5711 | 0.033 A, SILICON, SIGNAL DIODE, DO-213AA |
| JANCDLL6263 | 0.033 A, SILICON, SIGNAL DIODE, DO-213AA |
| JANCDLL5711 | 0.033 A, SILICON, SIGNAL DIODE, DO-213AA |
| JANTXMA4E2812 | SILICON, VHF-UHF BAND, MIXER DIODE |
| JANTXVMA4E2303 | SILICON, VHF-UHF BAND, MIXER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JANTXV1N6864US | 功能描述:Diode Schottky 80V 3A Surface Mount DO-213AA 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/620 包装:散装 零件状态:在售 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:80V 电流 - 平均整流（Io）:3A 不同 If 时的电压 - 正向（Vf）:700mV @ 3A 速度:快速恢复 = 200mA（Io） 反向恢复时间（trr）:- 不同?Vr 时的电流 - 反向漏电流:150μA @ 80V 不同?Vr，F 时的电容:- 安装类型:表面贴装 封装/外壳:DO-213AA 供应商器件封装:DO-213AA 工作温度 - 结:-65°C ~ 125°C 标准包装:1 |
| JANTXV1N7037CCU1 | 制造商:Microsemi Corporation 功能描述:1N7037CCU1JANTXV - Bulk |
| JANTXV1N7038U3 | 制造商:International Rectifier 功能描述:Diode Schottky 150V 30A 3-Pin SMD-0.5 制造商:International Rectifier 功能描述:DIODE, SCHOTTKY, DUAL - Bulk |
| JANTXV1N7039CCT1 | 功能描述:Diode Array 1 Pair Common Cathode Schottky 150V 35A Through Hole TO-254-3, TO-254AA (Straight Leads) 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/737 包装:散装 零件状态:在售 二极管配置:1 对共阴极 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:150V 电流 - 平均整流（Io）（每二极管）:35A 不同 If 时的电压 - 正向（Vf）:1.6V @ 35A 速度:标准恢复 >500ns，> 200mA（Io） 反向恢复时间（trr）:- 不同?Vr 时的电流 - 反向漏电流:500μA @ 150V 工作温度 - 结:-65°C ~ 150°C 安装类型:通孔 封装/外壳:TO-254-3，TO-254AA（直引线） 供应商器件封装:TO-254AA 标准包装:100 |
| JANTXV1N7045T3 | 制造商:International Rectifier 功能描述:10A 45V HIREL SCHOTTKY DISCRETE DIODE TO257AA PKC TXV CERTIF - Rail/Tube |
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