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参数资料
| 型号： | JANTXV2N6806 |
| 元件分类： | JFETs |
| 英文描述： | 6.5 A, 200 V, 0.92 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 封装： | HERMETIC SEALED, MODIFIED TO-3, 2 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 149K |
| 代理商： | JANTXV2N6806 |
IRF9230
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction to Case
—
1.67
RthJA
Junction-to-Ambient
—
30
Soldered to a 2” square copper-clad board
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
—
-6.5
ISM
Pulse Source Current (Body Diode)
—
-28
VSD
Diode Forward Voltage
—
-6.0
V
Tj = 25°C, IS =-6.5A, VGS = 0V
trr
Reverse Recovery Time
—
400
nS
Tj = 25°C, IF =-6.5A, di/dt ≤-100A/s
QRR
Reverse Recovery Charge
—
4.0
c
VDD ≤-50V
t on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ
Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
-200
—
V
VGS = 0V, ID = -1.0mA
BVDSS/TJ Temperature Coefficient of Breakdown
—
-0.20
—
V/°C
Reference to 25°C, ID = -1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
—
0.80
VGS =-10V, ID =-4.0A
Resistance
—
0.92
VGS =-10V, ID =-6.5A
VGS(th)
Gate Threshold Voltage
-2.0
—
-4.0
V
VDS = VGS, ID =-250A
gfs
Forward Transconductance
2.0
—
S ( )
VDS >-15V, IDS =-4.0A
IDSS
Zero Gate Voltage Drain Current
—
-25
VDS=-160V, VGS=0V
—
-250
VDS =-160V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
—
-100
VGS =-20V
IGSS
Gate-to-Source Leakage Reverse
—
1 0 0
VGS =-20V
Qg
Total Gate Charge
—
3 1
VGS =-10V, ID=-6.5A
Qgs
Gate-to-Source Charge
—
7.0
nC
VDS =-100V
Qgd
Gate-to-Drain (‘Miller’) Charge
—
1 7
td(on)
Turn-On Delay Time
—
5 0
VDD =-100V, ID =-6.5A,
t r
Rise Time
—
1 0 0
RG =7.5
td(off)
Turn-Off Delay Time
—
100
tf
Fall Time
—
8 0
LS + LD
Total Inductance
—
6.1
—
Ciss
Input Capacitance
—
700
VGS = 0V, VDS =25V
Coss
Output Capacitance
—
200
—
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
—
4 0
—
nA
nH
ns
A
Measured from the center of
drain pad to center of source
pad
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