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参数资料
型号： JANTXV2N7221
元件分类： JFETs
英文描述： 10 A, 400 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
封装： HERMETIC SEALED, TO-254AA, 3 PIN
文件页数： 5/5页
文件大小： 64K
代理商： JANTXV2N7221
Parameter
Min.
Typ.
Max.
Units
Test Conditions
BV
DSS
Drain-Source
500
V
GS = 0
V, I
D =1.0 mA,
Breakdown Voltage
R
DS(on)
Static Drain-to-Source
-
--
-
0.85
V
GS = 1
0 V, I
D = 5.0 A
3
On-State Resistance
-
--
-
0.95
V
GS = 1
0 V, I
D = 8.0 A
3
V
GS(th)
Gate Threshold Voltage
2.0
-
4.0
V
DS
= V
GS,
I
D = 250 A
I
DSS
Zero Gate Voltage Drain
-
--
-
25
A
V
DS = 400 V, VGS = 0V
Current
-
--
-
250
V
DS = 400 V, VGS = 0V, TJ = 125°C
I
GSS
Gate -to-Source Leakage Forward
-
--
-
100
nA
V
GS = 20 V
I
GSS
Gate -to-Source Leakage Reverse
-
--
-
-100
nA
V
GS = -20 V
Q
G(on)
On-state Gate Charge
-
--
-
68.5
nC
V
GS = 1
0 V, I
D = 8.0A
Q
GS
Gate-to-Source Charge
-
--
-
12.5
nC
V
DS = 250 V
Q
Gd
Gate-to-Drain (“Miller”) Charge
-
--
-
42.4
nC
See note 4
t
D(on)
Turn-On Delay Time
-
--
-
-21
ns
V
DD = 250 V, ID = 5.0A, RG = 9.1
t
r
Rise Time
-
--
-
73
ns
See note 4
t
D(off)
Turn-Off Delay Time
-
--
-
-72
ns
t
r
Fall Time
-
--
-
-51
ns
Source-Drain Diode Ratings and Characteristics
Parameter
Min.
Typ.
Max.
Units
Test Conditions
V
SD
Diode Forward Voltage
-
--
-
1.5
V
T
J
= 25°C, I
S
= 8.0A
3,VGS = 0 V
t
r
Reverse Recovery Time
-
--
-
700
ns
T
J = 25°C, IF= 8.0A,d
i/dt<100A/s
3
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
Test Conditions
R
thJC
Junction-to-Case
-
--
-
1.0
Mounting surface flat,
R
thCS
Case-to-sink
-
0.21
-
°C/W
smooth, and greased
R
thJA
Junction-to-Ambient
-
--
-
48
Typical socket mount
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
@V
DD= 50V, Starting TJ = 25°
C,L > 20 mH, R
G = 25
, Peak I
L = 8A
3. Pulse width < 300 s; Duty Cycle < 2%
4. See MIL-S-19500/596
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
Parameter
JANTXV, JANTX, 2N7222
Units
I
D @
V
GS = 10V, TC = 25°C
Continuous Drain Current
8.0
A
I
D @
V
GS = 10V, TC = 100°C
Continuous Drain Current
5.0
A
I
DM
Pulsed Drain Current
1
32
A
P
D @
T
C = 25°C
Maximum Power Dissipation
125
W
Linear Derating Factor
1.0
W/°C
V
GS
Gate-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy
2
700
4
mJ
I
AR
Avalanche Current
1
8.0
4
A
E
AR
Repetitive Avalanche Energy
1
12.5
4
mJ
TJ
Operating Junction
-55 to 150
°C
TSTG
Storage Temperature Range
Lead Temperature
300(.06 from case for 10 sec)
°C
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
ABSOLUTE MAXIMUM RATINGS (T
C = 25°C unless otherwise noted
2N7218, JANTX2N7218, JANTXV2N7218
2N7221, JANTX2N7221, JANTXV2N7221
2N7219, JANTX2N7219, JANTXV2N7219
2N7222, JANTX2N7222, JANTXV2N7222
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