参数资料
型号: JANTXVIN6626US
厂商: MICROSEMI CORP-SCOTTSDALE
元件分类: 整流器
英文描述: 1.55 A, 200 V, SILICON, RECTIFIER DIODE
封装: HERMETIC SEALED, GLASS, D-5B, 2 PIN
文件页数: 2/4页
文件大小: 264K
代理商: JANTXVIN6626US
VOIDLESS-HERMETICALLY-SEALED
SURFACE MOUNT ULTRA FAST
RECOVERY GLASS RECTIFIERS
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N6626US thru 1N6631US
1N6626US
1N6631US
ELECTRICAL CHARACTERISTICS @ 25oC
MAXIMUM
REVERSE
CURRENT IR @
VRWM
TYPE
NUMBER
MINIMUM
BREAK-
DOWN
VOLTAGE
VR
IR = 50 μA
MAXIMUM
FORWARD
VOLTAGE
VF @ IF
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
TA=25
oC
TA=150
oC
MAXIMUM
REVERSE
RECOVERY
TIME (LOW
CURRENT)
trr
Note 1
MAXIMUM
REVERSE
RECOVERY
TIME (HIGH
CURRENT)
trr
Note 2
PEAK
RECOVERY
CURRENT
IRM (rec)
IF = 2 A,
100 A/
μs
Note 2
FORWARD
RECOVERY
VOLTAGE
VFRM Max
IF = 0.5 A
tr = 12 ns
V
V @ A
V
μA
ns
A
V
1N6626US
220
1.35V @ 1.2A
1.50V @ 4.0A
200
2.0
500
30
45
3.5
8
1N6627US
440
1.35V @ 1.2A
1.50V @ 4.0A
400
2.0
500
30
45
3.5
8
1N6628US
660
1.35V @ 1.2A
1.50V @ 4.0A
600
2.0
500
30
45
3.5
8
1N6629US
880
1.40V @ 1.0A
1.70V @ 3.0A
800
2.0
500
50
60
4.2
12
1N6630US
990
1.40V @ 1.0A
1.70V @ 3.0A
900
2.0
500
50
60
4.2
12
1N6631US
1100
1.60V @ 1.0A
1.95V @ 2.0A
1000
4.0
600
60
80
5.0
20
NOTE 1: Low Current Reverse Recovery Time Test Conditions: IF=0.5A, IRM=1.0A, IR(REC) = 0.25A per MIL-STD-750,
Method 4031, Condition B.
NOTE 2: High Current Reverse Recovery Time Test Conditions: IF = 2 A, 100 A/μs MIL-STD-750, Method 4031,
Condition D.
SYMBOLS & DEFINITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VRWM
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IR
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
C
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
trr
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery decay point after a peak
reverse current is reached.
CHARTS AND GRAPHS
FIGURE 1
FIGURE 2
Typical Forward Current
vs
Forward Voltage
Microsemi
Scottsdale Division
Page 2
Copyright
2007
6-07-2007 REV D
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相关PDF资料
PDF描述
JANTXIN6629US 1.15 A, 800 V, SILICON, RECTIFIER DIODE
JANTXIN6630US 1.15 A, 900 V, SILICON, RECTIFIER DIODE
JANIN6626US 1.55 A, 200 V, SILICON, RECTIFIER DIODE
JANTXIN6628US 1.55 A, 600 V, SILICON, RECTIFIER DIODE
JANIN6631US 1.15 A, 1000 V, SILICON, RECTIFIER DIODE
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