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参数资料
| 型号： | JDH3D01FV |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.025 A, SILICON, SIGNAL DIODE |
| 封装： | LEAD FREE, 1-2S1C, VESM, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 273K |
| 代理商： | JDH3D01FV |
JDH3D01FV
2004-11-11
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH3D01FV
○
For wave detection
Small package
Lead (Pb) free
Maximum Ratings (Ta
= 25°C)
Electrical Characteristics (Ta
= 25°C)
Marking
Caution
This device is sensitive to electrostatic discharge. Operators should wear antistatic clothing, and containers and
other objects that come into direct contact with the product should be made of antistatic materials.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-2S1C
Characteristic
Symbol
Rating
Unit
Reverse voltage
VR
4
V
Forward current
IF
25
mA
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 2 mA
0.25
V
Forward current
IF
VF = 0.5 V
25
mA
Reverse current
IR
VR = 0.5 V
25
uA
Capacitance
CT
VR = 0.2 V, f = 1 MHz
0.6
pF
B Ｈ
VESM
1.
2
±
0
.05
0.
3
2
±
0
.05
1
2
3
0.
4
0.
4
0.
22
±
0.
05
0.8±0.05
0.
8
±
0
.05
1.2±0.05
0.
5
±
0.
0
5
0.
1
3
±
0.
05
1. ANODE１
2. CATHODE２
3. CATHODE１/ANODE２
Weight:0.0015g（typ.)
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