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参数资料
| 型号： | JDH3D01S |
| 元件分类： | 射频混频器 |
| 英文描述： | SILICON, MIXER DIODE |
| 封装： | SSM, 1-2S1C, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 168K |
| 代理商： | JDH3D01S |
JDH3D01S
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH3D01S
○
For wave detection
Small package
Absolute Maximum Ratings (Ta = 25°C)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Marking
Caution
This device is sensitive to electrostatic discharge. Operators should wear antistatic clothing, and containers and
other objects that come into direct contact with the product should be made of antistatic materials.
Unit: mm
1 1
2 2
3 1/ 2
JEDEC
―
JEITA
―
TOSHIBA
1-2S1C
Characteristic
Symbol
Rating
Unit
Reverse voltage
VR
4
V
Forward current
IF
25
mA
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 2 mA
0.25
V
Forward current
IF
VF = 0.5 V
25
mA
Reverse current
IR
VR = 0.5 V
25
uA
Capacitance
CT
VR = 0.2 V, f = 1 MHz
0.6
pF
B H
Weight:0.0024g(typ.)
SSM 1. ANODE1
2. CATHODE2
3. CATHODE1/ANODE2
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