
JDP2S01E
2007-12-10
1
TOSHIBA Diode Silicon Epitaxial Pin Type
JDP2S01E
UHF~VHF Band RF Attenuator Applications
Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
Low series resistance: rs = 0.65 (typ.)
Low capacitance: CT = 0.65 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
30
V
Forward current
IF
50
mA
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 10 μA
30
V
Reverse current
IR
VR = 30 V
0.1
μA
Forward voltage
VF
IF = 50 mA
0.9
0.95
V
Capacitance
CT
VR = 1 V, f = 1 MHz
0.65
0.8
pF
Series resistance
rs
IF = 10 mA, f = 100 MHz
0.65
1.0
Ω
Note: Signal level when capacitance is measured: Vsig
= 20 mVrms
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)