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参数资料
| 型号： | JDP3C04TU |
| 元件分类： | PIN二极管 |
| 英文描述： | 50 V, SILICON, PIN DIODE |
| 封装： | UFM, 1-2Y1A, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 158K |
| 代理商： | JDP3C04TU |
JDP3C04TU
2010-02-19
1
TOSHIBA Diode Silicon Epitaxial Pin Type
JDP3C04TU
VHF~UHF Band RF Attenuator Applications
Useful for small size package
Low capacitance: CT = 0.3 pF (typ.)
Low series resistance: rs = 3.0 (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
50
V
Forward current
IF
50
mA
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 10 μA
50
V
Reverse current
IR
VR = 50 V
0.1
μA
Forward voltage
VF
IF = 50 mA
0.92
1.0
V
Capacitance
CT
VR = 1 V, f = 1 MHz
0.3
pF
Series resistance
rs
IF = 10 mA, f = 100 MHz
3.0
Ω
Note: Signal level when capacitance is measured: Vsig
= 100 mVrms
Marking
Pin Assignment
Unit: mm
UFM
JEDEC
―
JEITA
―
TOSHIBA
1-2Y1A
Weight: 6.6 mg (typ.)
BB2
0.
3-
0.
05
1.7±0.1
2.1±0.1
1.
3±0.
1
2
2.
0±
0.
1
0.
16-
0.
05
3
0.
7±
0.
05
+0
.1
+0
.0
6
1.Anode1
2.Anode2
3.Cathode
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