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参数资料
| 型号： | JDV2S01E |
| 元件分类： | 变容二极管 |
| 英文描述： | UHF BAND, 3.15 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| 封装： | 1-1G1A, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 95K |
| 代理商： | JDV2S01E |
JDV2S01E
2002-01-16
1
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S01E
VCO for UHF band
Small Package
High Capacitance Ratio: C1V/C4V = 2.0 (typ.)
Low Series Resistance: rs = 0.5 (typ.)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 A
10
V
Reverse current
IR
VR = 10 V
3
nA
C1V
VR = 1 V, f = 1 MHz
2.85
3.15
3.45
Capacitance
C4V
VR = 4 V, f = 1 MHz
1.35
1.57
1.81
pF
Capacitance ratio
C1V/C4V
1.8
2
Series resistance
rs
VR = 1 V, f = 470 MHz
0.5
0.7
Note: Signal level when capacitance is measured. Vsig = 100 mVrms
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g
F A
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| JDV2S01FS | UHF BAND, 3.15 pF, SILICON, VARIABLE CAPACITANCE DIODE |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| JDV2S01E(TH3,F,T) | 制造商:Toshiba America Electronic Components 功能描述:Diode VAR Cap Single 10V 2.85pF 2-Pin ESC T/R |
| JDV2S01E-07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon Epitaxial Planar Type VCO for UHF band |
| JDV2S01ETH3FT | 功能描述:变容二极管 VARICAP DIODE RoHS:否 制造商:Skyworks Solutions, Inc. 电容:5.2 pF 反向电压:10 V 正向连续电流:20 mA 端接类型:SMD/SMT 封装 / 箱体:SC-79 封装:Reel |
| JDV2S01ETH3T | 制造商:Toshiba America Electronic Components 功能描述:VAR CAP SGL 10V 2.85PF 2PIN ESC - Bulk |
| JDV2S01ETPH3F | 制造商:Toshiba America Electronic Components 功能描述:VAR CAP - Tape and Reel |
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