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参数资料
| 型号： | JDV2S08S |
| 元件分类： | 参考电压二极管 |
| 英文描述： | UHF BAND, 18.3 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| 封装： | SESC, 1-1K1A, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 120K |
| 代理商： | JDV2S08S |
JDV2S08S
2007-11-01
1
TOSHIBA DIODE Silicon Epitaxial Planar Type
JDV2S08S
VCO for UHF Band Radio
High Capacitance Ratio: C1V/C4V = 3.0 (typ.)
Low Series Resistance : rs = 0.35 (typ.)
This device is suitable for use in a small-size tuner.
Absolute Maximum Ratings (Ta = 25°C)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 μA
10
V
Reverse current
IR
VR = 10 V
3
nA
C1V
VR = 1 V, f = 1 MHz
17.3
18.3
19.3
Capacitance
C4V
VR = 4 V, f = 1 MHz
5.3
6.1
6.6
pF
Capacitance ratio
C1V/C4V
2.8
3
Series resistance
rs
VR = 1 V, f = 470 MHz
0.35
0.45
Ω
Note: Signal level when capacitance is measured: Vsig = 500 mVrms
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1K1A
Weight: 0.0011 g (typ.)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
C
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