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参数资料
| 型号： | JDV2S19FS |
| 元件分类： | 变容二极管 |
| 英文描述： | UHF BAND, 3.665 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| 封装： | 1-1L1A, FSC, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 210K |
| 代理商： | JDV2S19FS |
JDV2S19FS
2005-08-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S19FS
VCO for the UHF band
High capacitance ratio: C1V/C4V = 1.82 (typ.)
Low series resistance: rs = 0.35 (typ.)
This device is suitable for use in a small-size tuner.
Maximum Ratings (Ta
= 25°C)
Characteristic
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Electrical Characteristics (Ta
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 A
10
V
Reverse current
IR
VR = 10 V
3
nA
C1V
VR = 1 V, f = 1 MHz
3.46
3.87
Capacitance
C4V
VR = 4 V, f = 1 MHz
1.83
2.13
pF
Capacitance ratio
C1V/C4V
1.74
1.91
Series resistance
rs
VR = 1 V, f = 470 MHz
0.35
0.47
Note: Signal level when capacitance is measured: Vsig = 100 mVrms
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1L1A
Weight: 0.0006 g (typ.)
0.
8±
0
.05
0.2
1.
0
±
0
.05
0.1±0.05
0.6±0.05
0.
1
0.
1
A
0.48+0.02
-0.03
±0.05
A
M
0.07
M
fSC
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相关代理商/技术参数 |
参数描述 |
|---|---|
| JDV2S19S | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA Diode Silicon Epitaxial Planar Type |
| JDV2S22FS | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon Epitaxial Planar Type |
| JDV2S25FS | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon Epitaxial Planar Type |
| JDV2S25FS(TPL3) | 功能描述:变容二极管 LOGIC VARACTOR Pb-F FSC VC RoHS:否 制造商:Skyworks Solutions, Inc. 电容:5.2 pF 反向电压:10 V 正向连续电流:20 mA 端接类型:SMD/SMT 封装 / 箱体:SC-79 封装:Reel |
| JDV2S25SC(TPL3) | 功能描述:变容二极管 LOGIC VARACTOR Pb-F SC2 VC RoHS:否 制造商:Skyworks Solutions, Inc. 电容:5.2 pF 反向电压:10 V 正向连续电流:20 mA 端接类型:SMD/SMT 封装 / 箱体:SC-79 封装:Reel |
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