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参数资料
| 型号： | JDV2S22S |
| 元件分类： | 变容二极管 |
| 英文描述： | UHF BAND, 3.43 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| 封装： | 1-1K1A, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 74K |
| 代理商： | JDV2S22S |
JDV2S22S
2004-02-09
1
TOSHIBA DIODE
Silicon Epitaxial Planar Type
JDV2S22S
VCO for UHF Band Radio
High Capacitance Ratio: C1V/C3V = 1.82 (typ.)
Low Series Resistance : rs = 0.5 ohm (typ.)
This device is suitable for use in a small-size tuner.
Maximum Ratings (Ta
= 25°C)
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 A
10
V
Reverse current
IR
VR = 10 V
3
nA
C1V
VR = 1 V, f = 1 MHz
3.24
3.62
Capacitance
C3V
VR = 3 V, f = 1 MHz
1.77
1.99
pF
Capacitance ratio
C1V/C3V
1.72
1.92
Series resistance
rs
VR = 1 V, f = 470 MHz
0.5
0.62
ohm
Note: Signal level when capacitance is measured: Vsig = 100 mVrms
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
1-1K1A
Weight: 0.0011 g (typ.)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
R
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| JDV2S25FS | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon Epitaxial Planar Type |
| JDV2S25FS(TPL3) | 功能描述:变容二极管 LOGIC VARACTOR Pb-F FSC VC RoHS:否 制造商:Skyworks Solutions, Inc. 电容:5.2 pF 反向电压:10 V 正向连续电流:20 mA 端接类型:SMD/SMT 封装 / 箱体:SC-79 封装:Reel |
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