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参数资料
| 型号： | JDV3C34 |
| 元件分类： | 变容二极管 |
| 英文描述： | 70 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE |
| 封装： | S-MINI, 1-3G1F, SC-59, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 167K |
| 代理商： | JDV3C34 |
JDV3C34
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV3C34
○
Electronic Tuning Applications for FM Receivers
High capacitance ratio: C2V/C6V = 2.6 (typ.)
Low series resistance: rs = 0.3 (typ.)
Two diodes in a single package
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Reverse voltage
VR
12
V
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Unit: mm
JEDEC
―
JEITA
SC-59
TOSHIBA
1-3G1F
Weight: 0.013 g (typ.)
1. Anode 1
2. Anode 2
3. Cathode
S-Mini
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