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参数资料
| 型号： | JDV3S26CT |
| 元件分类： | 变容二极管 |
| 英文描述： | UHF BAND, 15.8 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| 封装： | LEAD FREE, CST3, 1-1S1A, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 241K |
| 代理商： | JDV3S26CT |
JDV3S26CT
2005-11-07
1
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV3S26CT
VCO for UHF Band Radio
High capacitance ratio: C1V/C4V = 2.9 (typ.)
Low series resistance: rs = 0.37 (typ.)
This device is suitable for use in small tuners.
Lead (Pb)-free.
Maximum Ratings (Ta
= 25°C)
Characteristic
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Electrical Characteristics (Ta
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 A
10
V
Reverse current
IR
VR = 5 V
1
nA
C1V
VR = 1 V, f = 1 MHz
15.35
16.31
Capacitance
C4V
VR = 4 V, f = 1 MHz
5.27
5.6
pF
Capacitance ratio
C1V/C4V
2.82
3
Series resistance
rs
VR = 1 V, f = 470 MHz
0.37
0.52
Note: Signal level when capacitance is measured. Vsig = 100 mVrms
Marking
Unit: mm
1.Anode
2.NC
3.Cathode
JEDEC
―
JEITA
―
TOSHIBA
1-1S1A
Weight: 0.00075 g (typ.)
2
1
3
6 0
３
１２
0.
25±
0
.0
3
1.
0±
0
.05
0.
65
0.35
0.15±0.03
0.
2
5
±
0
.0
3
0.5±0.03
0.6±0.05
0.
3
8
+0
.0
2
-0
.0
3
0.05±0.03
0
.05±
0.
03
CST3
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相关代理商/技术参数 |
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