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参数资料
| 型号： | K1100S |
| 元件分类： | 晶闸管 |
| 英文描述： | 118 V, SIDAC, DO-214 |
| 封装： | DO-214, 2 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 73K |
| 代理商： | K1100S |
http://www.teccor.com
E9 - 2
2004 Teccor Electronics
+1 972-580-7777
Thyristor Product Catalog
Sidac
Data Sheets
Specific Test Conditions
di/dt — Critical rate-of-rise of on-state current
dv/dt — Critical rate-of-rise of off-state voltage at rated VDRM;
TJ ≤ 100 °C
IBO — Breakover current 50/60 Hz sine wave
IDRM — Repetitive peak off-state current 50/60 Hz sine wave; V = VDRM
IH — Dynamic holding current 50/60 Hz sine wave; R = 100
IT(RMS) — On-state RMS current TJ ≤ 125 °C 50/60 Hz sine wave
ITSM — Peak one-cycle surge current 50/60 Hz sine wave (non-
repetitive)
RS — Switching resistance
50/60 Hz sine wave
VBO — Breakover voltage 50/60 Hz sine wave
VDRM — Repetitive peak off-state voltage
VTM — Peak on-state voltage; IT = 1 A
General Notes
All measurements are made at 60 Hz with a resistive load at an
ambient temperature of +25 °C unless otherwise specified.
Storage temperature range (TS) is -65 °C to +150 °C.
The case (TC) or lead (TL) temperature is measured as shown on
the dimensional outline drawings in the “Package Dimensions” sec-
tion of this catalog.
Junction temperature range (TJ) is -40 °C to +125 °C.
Lead solder temperature is a maximum of +230 °C for 10 s maxi-
mum;
≥1/16" (1.59 mm) from case.
Electrical Specification Notes
(1)
See 4 for VBO change versus junction temperature.
(2)
See 4 for IBO versus junction temperature.
(3)
See 3 for IH versus case temperature.
(4)
See 5 for test circuit.
(5)
See 3 for more than one full cycle rating.
(6)
TC ≤ 90 °C for TO-92 Sidac
TC ≤ 105 °C for TO-202 Sidacs
TL ≤ 100 °C for DO-15X
TL ≤ 90 °C for DO-214
(7)
See 5 for clarification of sidac operation.
(8)
For best sidac operation, the load impedance should be near or
less than switching resistance.
(9)
See package outlines for lead form configurations. When ordering
special lead forming, add type number as suffix to part number.
(10) Do not use electrically connected mounting tab or center lead.
V-I Characteristics
Type
Part No.
IT(RMS)
VDRM
VBO
IDRM
IBO
IH
TO-92
DO-15X
(10)
TO-202
DO-214
(6) (7) (8)
Amps
Volts
(1)
Volts
Amps
(2)
Amps
(3) (4)
mAmps
See “Package Dimensions” section for variations. (9)
MAX
MIN
MAX
TYP
MAX
K0900E70
K0900G
K0900S
1
±70
79
97
5
10
60
150
K1050E70
K1050G
K1050S
1
±90
95
113
5
10
60
150
K1100E70
K1100G
K1100S
1
±90
104
118
5
10
60
150
K1200E70
K1200G
K1200S
1
±90
110
125
5
10
60
150
K1300E70
K1300G
K1300S
1
±90
120
138
5
10
60
150
K1400E70
K1400G
K1400S
1
±90
130
146
5
10
60
150
K1500E70
K1500G
K1500S
1
±90
140
170
5
10
60
150
K2000E70
K2000G
K2000F1
K2000S
1
±180
190
215
5
10
60
150
K2200E70
K2200G
K2200F1
K2200S
1
±180
205
230
5
10
60
150
K2400E70
K2400G
K2400F1
K2400S
1
±190
220
250
5
10
60
150
K2500E70
K2500G
K2500F1
K2500S
1
±200
240
280
5
10
60
150
K3000F1
1
±200
270
330
5
10
60
150
Pin 1
Pin 2
Do not use
Pin 3
Do
not
use
tab
R
S
V
BO
V
S
–
()
I
S
I
BO
–
()
--------------------------------
=
-V
+I
VDRM
+V
VS
IS
IH
RS
IDRM
IBO
VBO
VT
IT
(IS - IBO)
(VBO - VS)
RS =
-I
相关PDF资料 |
PDF描述 |
|---|---|
| K1200S | 125 V, SIDAC, DO-214 |
| K1300S | 138 V, SIDAC, DO-214 |
| K1400S | 146 V, SIDAC, DO-214 |
| K1500S | 170 V, SIDAC, DO-214 |
| K2000S | 215 V, SIDAC, DO-214 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| K1-100-S1S1N1 | 制造商:Oslo Switch 功能描述: |
| K1100SRP | 功能描述:硅对称二端开关元件 110V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| K1100Y | 制造商:LITTELFUSE 制造商全称:Littelfuse 功能描述:SIDACs feature glass-passivated junctions to ensure a rugged and dependable |
| K-1100Y | 功能描述:端子 BOX W/CRIMP TOOL RoHS:否 制造商:AVX 产品:Junction Box - Wire to Wire 系列:9826 线规:26-18 接线柱/接头大小: 绝缘: 颜色:Red 型式:Female 触点电镀:Tin over Nickel 触点材料:Beryllium Copper, Phosphor Bronze 端接类型:Crimp |
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