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参数资料
| 型号： | K1200S |
| 英文描述： | silicon bilateral voltage triggered switch |
| 中文描述： | 硅双边电压触发开关 |
| 文件页数： | 6/6页 |
| 文件大小： | 269K |
| 代理商： | K1200S |
Electrical Specifications
SIDAC
9-6
Teccor Electronics
(972) 580-7777
Figure 9.14
Dynamic Holding Current Test Circuit for Sidacs
Figure 9.15
Basic Sidac Circuit
Figure 9.16
Relaxation oscillator Using a Sidac
Figure 9.17
Sidac Added to Protect Transistor for Typical Transistor Inductive Load Switching Requirements
100-250
VAC
60 Hz
SCOPE
PUSH
TO
TEST
S1
SWITCH TO TEST IN
EACH DIRECTION
100
1%
UNDER
TEST
S1
SCOPE INDICATIONS
TRACE STOPS
IH
IPK
LOAD
100-250
VAC
60 Hz
IH
VBO
VBO
VBO
120-145
CONDUCTION
ANGLE
IH
IH
LOAD CURRENT
VDC(IN)
≥
VB0
VC
IL
RL
R
SIDAC
(a) Circuit
Rmax
≤
VIN - VBO
IBO
Rmin
≥
VIN - VTM
IH (MIN)
(b) Waveforms
VBO
VC
IL
t
t
C
VCE MONITOR
100 mH
IC MONITOR
+
-
RS = 0.1
TEST CIRCUIT
VBB1 =10 V
+
-
VBB2 =0
RBB2 =
100
RBB1 =
150
2N6127
(or equivalent)
50
50
INPUT
(See Note B)
TIP-47
VCC = 20 V
VOLTAGE AND CURRENT WAVEFORMS
INPUT
VOLTAGE
0 V
5 V
0.63 A
0
SIDAC VBO
10 V
VCE(sat)
≈
3 ms
(tw
COLLECTOR
CURRENT
COLLECTOR
VOLTAGE
100 mS
tw
NOTE A: Input pulse width is increased until ICM = 0.63A.
NOTE B: Sidac (or Diac or series of Diacs) chosen so that VBO is just below VCEO rating of transistor to be protected.
The Sidac (or Diac) eliminates a reverse breakdown of the transistor in inductive switching circuits where otherwise the
transistor could be destroyed.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| K1200S1S1N1/OCO1 | 制造商:Oslo Switch 功能描述: |
| K1-200S1S1N2 | 制造商:Oslo Switch 功能描述:Switch Key Lock Flat Key 4A 250VAC 28VDC Solder Lug Panel Mount |
| K1200SRP | 功能描述:硅对称二端开关元件 120V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| K1200Y | 制造商:LITTELFUSE 制造商全称:Littelfuse 功能描述:SIDACs feature glass-passivated junctions to ensure a rugged and dependable |
| K12020D | 制造商:CK tools 功能描述: |
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