参数资料
型号: K1400S
厂商: Littelfuse Inc
文件页数: 2/6页
文件大小: 0K
描述: SIDAC 130-146VBO 1A DO-214
标准包装: 5,000
电流 - 峰值输出: 1A
电压 - 击穿: 130 ~ 146V
电流 - 维持(Ih): 150mA
电流 - 击穿: 10µA
封装/外壳: DO-214AA,SMB
供应商设备封装: DO214 2L
包装: 散装
Sidac
Data Sheets
Part No.
(10)
I T(RMS)
(6) (7) (8)
V DRM
V BO
(1)
I DRM
I BO
(2)
I H
(3) (4)
Do
not
use
Type
Pin 1
Pin 2
tab
Pin 3
TO-92
DO-15X
Do not use
TO-202
DO-214
Amps
Volts
Volts
μAmps
μAmps
mAmps
See “Package Dimensions” section for variations. (9)
MAX
MIN
MIN
MAX
MAX
MAX
TYP
MAX
K0900E70
K1050E70
K1100E70
K1200E70
K1300E70
K1400E70
K1500E70
K0900G
K1050G
K1100G
K1200G
K1300G
K1400G
K1500G
K0900S
K1050S
K1100S
K1200S
K1300S
K1400S
K1500S
1
1
1
1
1
1
1
±70
±90
±90
±90
±90
±90
±90
79
95
104
110
120
130
140
97
113
118
125
138
146
170
5
5
5
5
5
5
5
10
10
10
10
10
10
10
60
60
60
60
60
60
60
150
150
150
150
150
150
150
K2000E70
K2200E70
K2400E70
K2000G
K2200G
K2400G
K2000F1
K2200F1
K2400F1
K2000S
K2200S
K2400S
1
1
1
±180
±180
±190
190
205
220
215
230
250
5
5
5
10
10
10
60
60
60
150
150
150
K2401F1
(11)
±190
220
250
5
10
60
150
K2500E70
K2500G
K2500F1
K2500S
1
±200
240
280
5
10
60
150
K3000F1
1
±200
270
330
5
10
60
150
repetitive)
( V – V )
R S — Switching resistance R S = -------------------------------- 50/60 Hz sine wave
( I – I )
Specific Test Conditions
di/dt — Critical rate-of-rise of on-state current
dv/dt — Critical rate-of-rise of off-state voltage at rated V DRM ;
T J ≤ 100 °C
dV q /dt — Critical rate-of-rise of turn-off voltage at 8 kHz
I BO — Breakover current 50/60 Hz sine wave
I DRM — Repetitive peak off-state current 50/60 Hz sine wave; V = V DRM
I H — Dynamic holding current 50/60 Hz sine wave; R = 100 ?
I T(RMS) — On-state RMS current T J ≤ 125 °C 50/60 Hz sine wave
I TSM — Peak one-cycle surge current 50/60 Hz sine wave (non-
BO S
S BO
V BO — Breakover voltage 50/60 Hz sine wave
V DRM — Repetitive peak off-state voltage
V TM — Peak on-state voltage; I T = 1 A
General Notes
(5) See Figure E9.1 for more than one full cycle rating.
(6) T C ≤ 90 °C for TO-92 Sidac
T C ≤ 105 °C for TO-202 Sidacs
T L ≤ 100 °C for DO-15X
T L ≤ 90 °C for DO-214
(7) See Figure E9.14 for clarification of sidac operation.
(8) For best sidac operation, the load impedance should be near or
less than switching resistance.
(9) See package outlines for lead form configurations. When ordering
special lead forming, add type number as suffix to part number.
(10) Do not use electrically connected mounting tab or center lead.
(11) The K2401F1 sidac is designed to ensure good commutation at
higher switching frequencies, as required in ignitor circuits for high
intensity discharge (HID) lighting. A typical circuit for a metal halide
lamp ignitor is shown in Figure E9.17. With proper component
selection this circuit will produce three pulses for ignition of Osram
lamp types such as HQI-T70W, HQI-T150W, and HQI-T250W which
require a minimum of three pulses at 4 kV magnitude and >1 μs
duration each at a minimum repetition rate of 3.3 kHz.
+I
?
All measurements are made at 60 Hz with a resistive load at an
ambient temperature of +25 °C unless otherwise specified.
I T
?
?
Storage temperature range (T S ) is -65 °C to +150 °C.
The case (T C ) or lead (T L ) temperature is measured as shown on
the dimensional outline drawings in the “Package Dimensions” sec-
I H
I S
R S
?
tion of this catalog.
Junction temperature range (T J ) is -40 °C to +125 °C.
-V
I DRM
I BO
+V
? Lead solder temperature is a maximum of +230 °C for 10 s maxi-
mum; ≥ 1/16" (1.59 mm) from case.
Electrical Specification Notes
R S =
( V BO - V S )
(I S - I BO )
V T
V BO
V S
V DRM
(1)
See Figure E9.5 for V BO change versus junction temperature.
(2)
(3)
(4)
See Figure E9.6 for I BO versus junction temperature.
See Figure E9.2 for I H versus case temperature.
See Figure E9.13 for test circuit.
V-I Characteristics
-I
http://www.littelfuse.com
+1 972-580-7777
E9 - 2
?2004 Littelfuse, Inc.
Thyristor Product Catalog
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