参数资料
型号: K1500E70
英文描述: silicon bilateral voltage triggered switch
中文描述: 硅双边电压触发开关
文件页数: 2/6页
文件大小: 269K
代理商: K1500E70
Electrical Specifications
SIDAC
9-2
Teccor Electronics
(972) 580-7777
General Notes
All measurements are made at 60Hz with a resistive load at an
ambient temperature of +25°C unless otherwise specified.
Storage temperature range (T
S
) is -65°C to +150°C.
The case (T
C
) or lead (T
L
) temperature is measured as shown on
the dimensional outline drawings. See “Package Dimensions” sec-
tion of this catalog.
Junction temperature range (T
J
) is -40°C to +125°C.
Lead solder temperature is a maximum of +230°C for 10 seconds
maximum;
1/16" (1.59mm) from case.
Electrical Specification Notes
(1)
(2)
(3)
(4)
(5)
(6)
(7)
See Figure 9.6 for V
BO
change vs junction temperature.
See Figure 9.7 for I
BO
vs junction temperature.
See Figure 9.2 for I
H
vs case temperature.
See Figure 9.14 for test circuit.
See Figure 9.1 for more than one full cycle rating.
R
θ
JA
for TO-202 Type 23 and Type 41 is 70°C/watt.
T
C
90°C for TO-92 Sidac and T
C
105°C for TO-202 Sidacs.
T
L
100°C for DO-15X and T
L
90°C for DO-214AA.
See Figure 9.15 for clarification of Sidac operation.
For best Sidac operation, the load impedance should be near or
less than switching resistance.
(10) Teccor's new, improved series of sidacs is designed to ensure
good commutation at higher switching requencies as equired n gnitor
circuits for high intensity discharge (HID) lighting. A typical circuit
for a metal halide lamp ignitor is shown in the schematic, Figure
9.3. With proper component selection this circuit will produce three
pulses for ignition of Osram lamp types such as HQI-T70W, HQI-
T150W, and HQI-T250W which require a minimum of three pulses
at 4kV magnitude and >1
μ
s duration each at a minimum repetition
rate of 3.3kHz.
(8)
(9)
Type
Part No.
I
T(RMS)
V
DRM
V
BO
I
DRM
I
BO
TO-92
E Package
DO-15X
G Package
TO-202AB
F Package
DO-214AA
S Package
On-State
RMS Current
T
125°C
50/60Hz
Sine Wave
(7) (8)
Amps
MAX
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0 (10)
1.0
1.0
Repetitive
Peak
Off-State
Voltage
Volts
MIN
±90
±90
±90
±90
±90
±90
±180
±180
±190
±190
±190
±190
Breakover Voltage
50/60Hz Sine Wave
(1)
Volts
Repetitive
Peak
Off-State
Current
50/60Hz
Sine Wave
V=V
DRM
μAmps
MAX
5
5
5
5
5
5
5
5
5
5
5
5
Breakover
Current
50/60Hz
Sine Wave
μAmps
MAX
10
10
10
10
10
10
10
10
10
10
10
10
See “Package Dimensions” section for variations.
K1050E70
K1050G
K1100E70
K1100G
K1200E70
K1200G
K1300E70
K1300G
K1400E70
K1400G
K1500E70
K1500G
K2000E70
K2000G
K2200E70
K2200G
K2400E70
K2400G
MIN
95
104
110
120
130
140
190
205
220
220
240
270
MAX
113
118
125
138
146
170
215
230
250
250
280
330
K1050S
K1100S
K1200S
K1300S
K1400S
K1500S
K2000S
K2200S
K2400S
K2000F1
K2200F1
K2400F1
K2401F1
K2500F1
K3000F1
K2500E70
K2500G
K2500S
相关PDF资料
PDF描述
K1200E70 silicon bilateral voltage triggered switch
K1200G silicon bilateral voltage triggered switch
K1200S silicon bilateral voltage triggered switch
K1100E70 silicon bilateral voltage triggered switch
K1100G silicon bilateral voltage triggered switch
相关代理商/技术参数
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K1500E70AP 功能描述:硅对称二端开关元件 150V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
K1500E70RP 功能描述:SIDAC 140-170V RoHS:是 类别:分离式半导体产品 >> 二端交流开关元件,硅对称二端开关元件 系列:- 产品变化通告:Product Obsolescence 14/Apr/2010 标准包装:5,000 系列:- 电流 - 峰值输出:900mA 电压 - 击穿:150 ~ 170V 电流 - 维持(Ih):100mA 电流 - 击穿:200µA 封装/外壳:DO-204AL,DO-41,轴向 供应商设备封装:轴向 包装:带卷 (TR)
K1500E70RP2 功能描述:SIDAC 150V 1A TO-92 RoHS:否 类别:分离式半导体产品 >> 二端交流开关元件,硅对称二端开关元件 系列:- 产品变化通告:Product Obsolescence 14/Apr/2010 标准包装:5,000 系列:- 电流 - 峰值输出:900mA 电压 - 击穿:150 ~ 170V 电流 - 维持(Ih):100mA 电流 - 击穿:200µA 封装/外壳:DO-204AL,DO-41,轴向 供应商设备封装:轴向 包装:带卷 (TR)
K1500E70RP3 功能描述:硅对称二端开关元件 150V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
K1500G 功能描述:硅对称二端开关元件 150V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA