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参数资料
| 型号： | K1N60SA |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | TRIAC (Silicon Bidirectional Thyristor) |
| 中文描述： | 可控硅（硅双向晶闸管） |
| 文件页数： | 1/7页 |
| 文件大小： | 259K |
| 代理商： | K1N60SA |
2006 Fairchild Semiconductor Corporation
FKN1N60SA Rev. A
1
www.fairchildsemi.com
F
tm
August 2006
FKN1N60SA
TRIAC (Silicon Bidirectional Thyristor)
Application Explanation
Switching mode power supply, light dimmer, electric flasher unit, hair drier
TV sets, stereo, refrigerator, washing machine
Electric blanket, solenoid driver, small motor control
Photo copier, electric tool
Absolute Maximum Ratings
T
a
= 25°C unless otherwise noted
Thermal Characteristics
Note1: Infinite cooling condition.
Note2: JESD51-10 ( Test Borad: FR4 3.0”*4.5”*0.062”, Minimum land pad)
Symbol
Parameter
Value
Rating
Units
V
DRM
V
RRM
Peak Repetitive Off-State Voltage
Sine Wave 50 to 60Hz, Gate Open
600
V
I
T (RMS)
RMS On-State Current
Commercial frequency, sine full wave
360
°
conduction, Tc= 70
℃
1.0
A
I
TSM
Surge On-State Current
Sinewave 1 full cycle, peak value,
non-repetitive
50Hz
9
A
60Hz
10
A
I
2
t
I
2
t for Fusing
Value corresponding to 1 cycle of halfwave,
surge on-state current, tp=8.4ms
0.41
A
2
s
P
GM
Peak Gate Power Dissipation
5
W
P
G (AV)
Average Gate Power Dissipation
0.1
W
V
GM
Peak Gate Voltage
5
V
I
GM
Peak Gate Current
1
A
T
J
Junction Temperature
- 40 ~ 125
°
C
T
STG
Storage Temperature
- 40 ~ 125
°
C
Symbol
Parameter
Value
Units
R
θ
JC
Thermal Resistance, Junction to Case
(note1)
40
°
C/W
R
θ
JA
Thermal Resistance, Junction to Ambient
(note2)
160
°
C/W
1
3
2
1: T
1
2: Gate
3: T
2
1 2 3
TO-92
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