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参数资料
| 型号： | K2000GHAP |
| 厂商： | Littelfuse Inc |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | SIDAC 200V 1A DO-15 |
| 标准包装： | 2,000 |
| 电流 - 峰值输出： | 1A |
| 电压 - 击穿： | 190 ~ 215V |
| 电流 - 维持(Ih)： | 150mA |
| 电流 - 击穿： | 50µA |
| 封装/外壳： | DO-204AC，DO-15，轴向 |
| 供应商设备封装： | DO-15 |
| 包装： | 带盒（TB） |
Teccor ? brand Thyristors
High Energy Bidirectional SIDACs
Kxxx0yH Series
Description
The new Kxxx0yH is a higher energy SIDAC switch for gas
ignition applications requiring higher current pulse current
especially at low repetition rate. It is offered in a DO-15 and
TO-92 leaded packages as well as DO-214 surface mount
package. Voltage activation of this solid state switch is
accomplished with peak voltage level of 190 to 280Volts. The
SIDAC is a silicon bilateral voltage triggered Thyristor switch
that switches on through a negative resistance region to a
low on-state voltage. Conduction will continue until current
is interrupted or lowered below minimum holding current of
the device.
Features
Schematic Symbol
Capability
to 280V
Applications
Suitable for high voltage power supplies, natural gas
igniters, and Xenon ?ash ignition.
Electrical Speci?cations (T J = 25°C, unless otherwise speci?ed)
Symbol
Parameters
Test Conditions
Min
Max
Unit
K2000yH
190
215
V BO
Breakover/Trigger Voltage
K2200yH
K2400yH
205
220
230
250
V
K2500yH
K2000yH
240
180
280
V DRM
Repetitive Peak Off-state Voltage
K2200yH
K2400yH
180
190
V
K2500yH
200
Switching Resistance, R S = ________
I T(RMS)
V TM
I H
R S
I BO
On-state RMS Current
Peak On-state Voltage
Dynamic Holding Current
(V BO – V S )
(I S – I BO )
Breakover Current
50/60Hz, T J < 125°C
I T = 1A
R L = 100Ω
50/60Hz Sine Wave
50/60Hz Sine Wave
50/60Hz Sine Wave
1
1.5
150
100
50
A
V
mA
μA
I TRM
di/dt
dv/dt
T S
T J
Peak Repetitive Pulse Current
(refer to ?gure 4)
Critical Rate of Rise of On-State Current
Critical Rate of Rise of Off-State Voltage
Storage Temperature Range
Junction Temperature Range
t p = 10μs
60Hz
5Hz
1500
-40
-40
120
280
150
150
125
A
A/μs
V/μs
°C
°C
R
R
R
JL
JC
JA
Thermal Resistance, Junction to Lead
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
DO-15
DO-214
DO-92
DO-15
DO-92
18
30
35
75
95
°C/W
°C/W
°C/W
Note: xxx - voltage, y = package
?2008 Littelfuse, Inc.
Speci?cations are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
321
Revised: August 29, 2008
Kxxx0yH Series
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相关代理商/技术参数 |
参数描述 |
|---|---|
| K2000GHRP | 功能描述:SIDAC 200V 1A DO-15 RoHS:否 类别:分离式半导体产品 >> 二端交流开关元件，硅对称二端开关元件 系列:- 产品变化通告:Product Obsolescence 14/Apr/2010 标准包装:5,000 系列:- 电流 - 峰值输出:900mA 电压 - 击穿:150 ~ 170V 电流 - 维持(Ih):100mA 电流 - 击穿:200µA 封装/外壳:DO-204AL，DO-41，轴向 供应商设备封装:轴向 包装:带卷 (TR) |
| K2000GHU | 功能描述:SIDAC 200V 1A DO-15 RoHS:否 类别:分离式半导体产品 >> 二端交流开关元件，硅对称二端开关元件 系列:- 产品变化通告:Product Obsolescence 14/Apr/2010 标准包装:5,000 系列:- 电流 - 峰值输出:900mA 电压 - 击穿:150 ~ 170V 电流 - 维持(Ih):100mA 电流 - 击穿:200µA 封装/外壳:DO-204AL，DO-41，轴向 供应商设备封装:轴向 包装:带卷 (TR) |
| K2000GHURP | 功能描述:SIDAC 200V 1A DO-15 RoHS:否 类别:分离式半导体产品 >> 二端交流开关元件，硅对称二端开关元件 系列:- 产品变化通告:Product Obsolescence 14/Apr/2010 标准包装:5,000 系列:- 电流 - 峰值输出:900mA 电压 - 击穿:150 ~ 170V 电流 - 维持(Ih):100mA 电流 - 击穿:200µA 封装/外壳:DO-204AL，DO-41，轴向 供应商设备封装:轴向 包装:带卷 (TR) |
| K2000GRP | 功能描述:硅对称二端开关元件 200V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| K2000S | 功能描述:硅对称二端开关元件 200V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
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