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参数资料
| 型号： | K3P4C1000D-TE10 |
| 元件分类： | PROM |
| 英文描述： | 512K X 16 MASK PROM, 100 ns, PDSO44 |
| 封装： | 0.400 INCH, TSOP2-44 |
| 文件页数： | 3/4页 |
| 文件大小： | 63K |
| 代理商： | K3P4C1000D-TE10 |
K3P4C1000D-TC(E)
CMOS MASK ROM
TEST CONDITIONS
Item
Value
Input Pulse Levels
0.6V to 2.4V
Input Rise and Fall Times
10ns
Input and Output timing Levels
0.8V and 2.0V
Output Loads
1 TTL Gate and CL=100pF
AC CHARACTERISTICS(TA=0
°C to +70°C, VCC=5.0V±10%, unless otherwise noted.)
READ CYCLE
NOTE : Page Address is determined as below.
Word mode (BHE = VIH) : A0, A1
Byte mode (BHE = VIL) : A-1, A0, A1
Item
Symbol
K3P4C1000D-
TC(E)10
K3P4C1000D-
TC(E)12
K3P4C1000D-
TC(E)15
Unit
Min
Max
Min
Max
Min
Max
Read Cycle Time
tRC
100
120
150
ns
Chip Enable Access Time
tACE
100
120
150
ns
Address Access Time
tAA
100
120
150
ns
Page Address Access Time
tPA
30
50
70
ns
Output Enable Access Time
tOE
30
50
70
ns
Output or Chip Disable to
Output High-Z
tDF
20
30
ns
Output Hold from Address Change
tOH
0
ns
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