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参数资料
| 型号： | K4F660411C-JL50 |
| 元件分类： | DRAM |
| 英文描述： | 16M X 4 FAST PAGE DRAM, 50 ns, PDSO32 |
| 封装： | 0.400 INCH, PLASTIC, SOJ-32 |
| 文件页数： | 1/20页 |
| 文件大小： | 367K |
| 代理商： | K4F660411C-JL50 |
CMOS DRAM
K4F660411C, K4F640411C
This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time(-50 or -60), package type(SOJ or TSOP-II) are optional fea-
tures of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 16Mx4 Fast
Page Mode DRAM family is fabricated using Samsung
′s advanced CMOS process to realize high band-width, low power consumption
and high reliability.
Fast Page Mode operation
CAS-before-RAS refresh capability
RAS-only and Hidden refresh capability
Fast parallel test mode capability
TTL(5.0V) compatible inputs and outputs
Early Write or output enable controlled write
JEDEC Standard pinout
Available in Plastic SOJ and TSOP(II) packages
+5.0V
±10% power supply
Control
Clocks
RAS
CAS
W
Vcc
Vss
A0~A12
(A0~A11)*1
A0~A10
(A0~A11)*1
Memory Array
16,777,216 x 4
Cells
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
16M x 4bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
Note) *1 : 4K Refresh
S
e
n
s
e
A
m
p
s
&
I/
O
Data out
Buffer
DQ0
to
DQ3
Data in
Buffer
Row Decoder
Column Decoder
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
OE
Part Identification
- K4F660411C-JC(5.0V, 8K Ref.)
- K4F640411C-JC(5.0V, 4K Ref.)
- K4F660411C-TC(5.0V, 8K Ref.)
- K4F640411C-TC(5.0V, 4K Ref.)
FEATURES
Refresh Cycles
Part
NO.
Refresh
cycle
Refresh time
Normal
K4F660411C*
8K
64ms
K4F640411C
4K
Performance Range
Speed
tRAC
tCAC
tRC
tPC
-50
50ns
13ns
90ns
35ns
-60
60ns
15ns
110ns
40ns
Active Power Dissipation
Speed
8K
4K
-50
495
660
-60
440
605
Unit : mW
* Access mode & RAS only refresh mode
: 8K cycle/64ms
CAS-before-RAS & Hidden refresh mode
: 4K cycle/64ms
相关PDF资料 |
PDF描述 |
|---|---|
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| K4S280432M-TC80 | 32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
| K4S280832M-TC1L0 | 16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
| K4S281632D-TI7C | 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| K4S281632D-TP7C | 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| K4F660412D | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Fast Page Mode |
| K4F660811B | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
| K4F660812D | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
| K4F661612B | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| K4F661612B-L | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
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