参数资料
型号: K6F8016R6D-F
厂商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
中文描述: 为512k x16位超低功耗和低电压的CMOS静态RAM全
文件页数: 1/9页
文件大小: 154K
代理商: K6F8016R6D-F
K6F8016R6D Family
Revision 0.1
September 2004
1
CMOS SRAM
Preliminary
Document Title
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No.
0.0
0.1
Remark
Preliminary
Preliminary
History
Initial draft
Revised
- Updated DC parameters (I
CC
1, I
CC
2
, I
SB
1, I
DR
)
- Deleted 55ns Speed bin
Draft Date
April 26, 2004
September 13, 2004
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
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相关代理商/技术参数
参数描述
K6F8016T6C 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F8016T6C-FF55 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F8016T6C-FF70 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F8016U6 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F8016U6A-EF70 制造商:Samsung Electro-Mechanics 功能描述:Static RAM, 512Kx16, 48 Pin, Plastic, BGA