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参数资料
| 型号： | K6L0908C2A-GL70 |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64Kx8 bit Low Power CMOS Static RAM |
| 中文描述： | 64Kx8位低功耗CMOS静态RAM |
| 文件页数： | 6/9页 |
| 文件大小： | 143K |
| 代理商： | K6L0908C2A-GL70 |
K6L0908C2A Family
CMOS SRAM
Revision 4.0
January 1997
6
Address
Data Out
Previous Data Valid
Data Valid
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS1=OE=V
IL
, WE=V
IH
)
t
AA
t
RC
t
OH
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
Data Valid
High-Z
CS
1
Address
OE
Data ou
t
NOTES (
READ CYCLE)
1.
t
HZ
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
t
HZ
(Max.) is less than
t
LZ
(Min.) both for a given device and from device to device
interconnection.
CS
2
t
OH
t
AA
t
CO1
t
OLZ
t
LZ
t
OHZ
t
HZ(1,2)
t
RC
t
CO2
t
OE
相关PDF资料 |
PDF描述 |
|---|---|
| K6L0908C2A-TB55 | 64Kx8 bit Low Power CMOS Static RAM |
| K6L0908C2A-TB70 | 64Kx8 bit Low Power CMOS Static RAM |
| K6L0908C2A-B | 64Kx8 bit Low Power CMOS Static RAM |
| K6L0908C2A-F | 64Kx8 bit Low Power CMOS Static RAM |
| K6L0908C2A | 64Kx8 bit Low Power CMOS Static RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| K6L0908C2A-L | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:64Kx8 bit Low Power CMOS Static RAM |
| K6L0908C2A-P | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:64Kx8 bit Low Power CMOS Static RAM |
| K6L0908C2A-TB55 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:64Kx8 bit Low Power CMOS Static RAM |
| K6L0908C2A-TB70 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:64Kx8 bit Low Power CMOS Static RAM |
| K6LCH | 制造商:ABB Low Voltage Products and Systems 功能描述:LUG COVER, HIGH RCS S6 3P ISO |
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