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参数资料
| 型号： | K6R1004V1C-L20 |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| 中文描述： | 256Kx4位（与OE）的高速CMOS静态RAM（3.3V的）。 |
| 文件页数： | 4/9页 |
| 文件大小： | 137K |
| 代理商： | K6R1004V1C-L20 |
PRELIMINARY
PRELIMINARY
CMOS SRAM
Revision 2.0
April 2000
- 4 -
CCPCCCRPreliminary
K6R1004V1C-C/C-L, K6R1004V1C-I/C-P
TEST CONDITIONS
Parameter
Value
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Reference Levels
1.5V
Output Loads
See below
AC CHARACTERISTICS
(T
A
=0 to 70
°
C, V
CC
=3.3
±
0.3V, unless otherwise noted.)
Output Loads(B)
for t
HZ
, t
LZ
, t
WHZ
, t
OW
, t
OLZ
& t
OHZ
D
OUT
5pF*
319
353
+3.3V
* Including Scope and Jig Capacitance
Output Loads(A)
D
OUT
R
L
= 50
Z
O
= 50
V
L
= 1.5V
30pF*
* Capacitive Load consists of all components of the
test environment.
READ CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Sym-
bol
K6R1004V1C-10
K6R1004V1C-12
K6R1004V1C-15
K6R1004V1C-20
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
RC
10
-
12
-
15
-
20
-
ns
Address Access Time
t
AA
-
10
-
12
-
15
-
20
ns
Chip Select to Output
t
CO
-
10
-
12
-
15
-
20
ns
Output Enable to Valid Output
t
OE
-
5
-
6
-
7
-
9
ns
Chip Enable to Low-Z Output
t
LZ
3
-
3
-
3
-
3
-
ns
Output Enable to Low-Z Output
t
OLZ
0
-
0
-
0
-
0
-
ns
Chip Disable to High-Z Output
t
HZ
0
5
0
6
0
7
0
9
ns
Output Disable to High-Z Output
t
OHZ
0
5
0
6
0
7
0
9
ns
Output Hold from Address
t
OH
3
-
3
-
3
-
3
-
ns
Chip Selection to Power Up Time
t
PU
0
-
0
-
0
-
0
-
ns
Chip Selection to Power Down-
t
PD
-
10
-
12
-
15
-
20
ns
相关PDF资料 |
PDF描述 |
|---|---|
| K6R1004V1C-P10 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-P12 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-P15 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1D | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| K6R1004V1C-P | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-P10 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-P12 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-P15 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-P20 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
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