参数资料
型号: K6R1004V1C-L
厂商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
中文描述: 256Kx4位(与OE)的高速CMOS静态RAM(3.3V的)。
文件页数: 8/9页
文件大小: 137K
代理商: K6R1004V1C-L
PRELIMINARY
PRELIMINARY
CMOS SRAM
Revision 2.0
April 2000
- 8 -
V
CC
=3.0V, CS
V
CC
-0.2V
V
IN
V
CC
-0.2V or V
IN
0.2V
K6R1004V1C-C/C-L, K6R1004V1C-I/C-P
DATA RETENTION CHARACTERISTICS*
(T
A
=0
to 70
°
C)
* The above parameters are also guaranteed at industrial temperature range.
Data Retention Characteristic is for L-ver only.
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Unit
V
CC
for Data Retention
V
DR
CS
V
CC
-0.2V
2.0
-
3.6
V
Data Retention Current
I
DR
-
-
0.4
mA
V
CC
=2.0V, CS
V
CC
-0.2V
V
IN
V
CC
-0.2V or V
IN
0.2V
-
-
0.3
Data Retention Set-Up Time
t
SDR
See Data Retention
Wave form(below)
0
-
-
ns
Recovery Time
t
RDR
5
-
-
ms
DATA RETENTION WAVE FORM
CS controlled
V
CC
4.5V
V
IH
V
DR
CS
GND
Data Retention Mode
CS
V
CC
- 0.2V
t
SDR
t
RDR
相关PDF资料
PDF描述
K6R1004V1C-L10 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
K6R1004V1C-L12 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
K6R1004V1C-L15 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
K6R1004V1C-L20 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
K6R1004V1C-P10 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
相关代理商/技术参数
参数描述
K6R1004V1C-L10 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
K6R1004V1C-L12 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
K6R1004V1C-L15 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
K6R1004V1C-L20 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
K6R1004V1C-P 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).