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参数资料
| 型号： | K6R1004V1D-JI10 |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| 中文描述： | 256Kx4位（与OE）的高速CMOS静态RAM（5.0V操作）。 |
| 文件页数： | 2/9页 |
| 文件大小： | 137K |
| 代理商： | K6R1004V1D-JI10 |
PRELIMINARY
PRELIMINARY
CMOS SRAM
Revision 2.0
April 2000
- 2 -
CCPCCCRPreliminary
an output enable pin which operates faster than address
access time at read cycle. The device is fabricated using SAM-
SUNG
′
s advanced CMOS process and designed for high-
speed circuit technology. It is particularly well suited for use in
high-density
high-speed
K6R1004V1C is packaged in a 400 mil 32-pin plastic SOJ.
K6R1004V1C-C/C-L, K6R1004V1C-I/C-P
256K x 4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating)
FEATURES
Fast Access Time 10,12,15,20ns(Max.)
Low Power Dissipation
Standby (TTL) : 30mA(Max.)
(CMOS) : 5mA(Max.)
0.5mA(Max.) L-Ver. only
Operating K6R1004V1C-10 : 75mA(Max.)
K6R1004V1C-12 : 70mA(Max.)
K6R1004V1C-15 : 68mA(Max.)
K6R1004V1C-20 : 65mA(Max.)
Single 3.3
±
0.3V Power Supply
TTL Compatible Inputs and Outputs
Fully Static Operation
- No Clock or Refresh required
Three State Outputs
2V Mimimum Data Retention ; L-ver. Only
Center Power/Ground Pin Configuration
Standard Pin Configuration :
K6R1004V1C-J : 32-SOJ-400
GENERAL DESCRIPTION
The K6R1004V1C is a 1,048,576-bit high-speed Static Random
system
applications.
The
PIN FUNCTION
Pin Name
Pin Function
A
0
- A
17
Address Inputs
WE
Write Enable
CS
Chip Select
OE
Output Enable
I/O
1
~ I/O
4
Data Inputs/Outputs
V
CC
Power(+3.3V)
V
SS
Ground
N.C
No Connection
PIN CONFIGURATION
(Top View)
Clk Gen.
I/O
1
~ I/O
4
CS
WE
OE
FUNCTIONAL BLOCK DIAGRAM
R
Data
Cont.
Column Select
CLK
Gen.
Pre-Charge Circuit
Memory Array
512 Rows
512x4 Columns
I/O Circuit &
SOJ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A
17
A
16
A
15
A
14
A
13
OE
I/O
4
Vss
Vcc
I/O
3
A
12
A
11
A
10
A
9
A
8
N.C
N.C
A
0
A
1
A
2
A
3
CS
I/O
1
Vcc
Vss
I/O
2
WE
A
4
A
5
A
6
A
7
N.C
A
10
A
11
A
12
A
13
A
14
A
15
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
16
A
17
K6R1004V1C-C10/C12/C15/C20
Commercial Temp.
K6R1004V1C-I10/I12/I15/I20
Industrial Temp.
ORDERING INFORMATION
相关PDF资料 |
PDF描述 |
|---|---|
| K6R1004V1C-P | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-P20 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1D-JC10 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004V1D-JI08 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004V1C-C | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
相关代理商/技术参数 |
参数描述 |
|---|---|
| K6R1004V1D-KC08 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004V1D-KC08/10 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1004V1D-KC10 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004V1D-KI08 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1004V1D-KI08/10 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
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