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参数资料
| 型号： | K6T0808C1D-L |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32Kx8 bit Low Power CMOS Static RAM |
| 中文描述： | 32Kx8位低功耗CMOS静态RAM |
| 文件页数： | 4/9页 |
| 文件大小： | 170K |
| 代理商： | K6T0808C1D-L |
K6T0808C1D Family
CMOS SRAM
Revision 1.0
November 1997
RECOMMENDED DC OPERATING CONDITIONS1)
Note:
1. Commercial Product : TA=0 to 70
°C, otherwise specified
Industrial Product : TA=-40 to 85
°C, otherwise specified
2. Overshoot : VCC+3.0V in case of pulse width
≤30ns
3. Undershoot : -3.0V in case of pulse width
≤30ns
4. Overshoot and undershoot are sampled, not 100% tested
Item
Symbol
Min
Typ
Max
Unit
Supply voltage
Vcc
4.5
5.0
5.5
V
Ground
Vss
0
V
Input high voltage
VIH
2.2
-
Vcc+0.5V2)
V
Input low voltage
VIL
-0.53)
-
0.8
V
CAPACITANCE1) (f=1MHz, TA=25
°C)
1. Capacitance is sampled not, 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
CIN
VIN=0V
-
8
pF
Input/Output capacitance
CIO
VIO=0V
-
10
pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
ILI
VIN=Vss to Vcc
-1
-
1
A
Output leakage current
ILO
CS=VIH or OE=VIH or WE=VIL, VIO=VSS to Vcc
-1
-
1
A
Operating power supply current
ICC
IIO=0mA, CS=VIL, VIN=VIH or VIL, Read
-
5
10
mA
Average operating current
ICC1
Cycle time=1
s, 100% duty, IIO=0mA
CS
≤0.2V, VIN≤0.2V, VIN≥Vcc -0.2V
Read
-
2
5
mA
Write
-
20
ICC2
Cycle time=Min,100% duty, IIO=0mA, CS=VIL, VIN=VIH or VIL
-
45
60
mA
Output low voltage
VOL
IOL=2.1mA
-
0.4
V
Output high voltage
VOH
IOH=-1.0mA
2.4
-
V
Standby Current(TTL)
ISB
CS=VIH, Other inputs=VIH or VIL
-
1
mA
Standby Current (CMOS)
ISB1
CS
≥Vcc-0.2V, Other inputs=0~Vcc
Low Power
-
1
30
A
Low Low Power
-
0.2
5
A
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| K6T0808C1D-P | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:32Kx8 bit Low Power CMOS Static RAM |
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