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参数资料
| 型号： | K6T4008V1C-TF70 |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| 中文描述： | 512Kx8位低功耗和低电压的CMOS静态RAM |
| 文件页数： | 1/10页 |
| 文件大小： | 186K |
| 代理商： | K6T4008V1C-TF70 |
K6T4008V1C, K6T4008U1C Family
CMOS SRAM
Revision 1.0
January 1999
1
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
Revision History
Revision No.
0.0
0.1
0.11
1.0
Remark
Advance
Preliminary
Final
History
Initial Draft
Revisied
- Speed bin change
KM68U4000C : 85/100ns
→
70/85/100ns
- DC Characteristics change
I
CC
: 5mA at read/write
→
4mA at read
I
CC1
: 3mA
→
4mA
I
CC2
: 35mA
→
30mA
I
SB
: 0.5mA
→
0.3mA
I
SB1
: 10
μ
A
→
15
μ
A for commercial parts
- Add 32-TSOP1-0820
Errata correct
- 32-TSOP1-0813 products: T
→
TG
Finalize
Draft Data
January 13, 1998
June 12, 1998
November 7, 1998
January 15, 1999
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
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相关代理商/技术参数 |
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|---|---|
| K6T4008V1C-TF85 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4008V1C-VB70 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6T4008V1C-VB70000 | 制造商:Samsung SDI 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 70ns 32-Pin TSOP-II Tray |
| K6T4008V1C-VB70T00 | 制造商:Samsung SDI 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 70ns 32-Pin TSOP-II T/R |
| K6T4008V1C-VB85 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
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