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参数资料
| 型号： | K7R323682 |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM |
| 中文描述： | 1Mx36 |
| 文件页数： | 5/19页 |
| 文件大小： | 201K |
| 代理商： | K7R323682 |
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
- 13 -
Rev 2.0
Dec. 2003
K7R323682M
K7R321882M
K7R320982M
APPLICATION INRORMATION
THERMAL RESISTANCE
Note: Junction temperature is a function of on-chip power dissipation, package thermal impedance, mounting site temperature and mounting site
thermal impedance. TJ=TA + PD x
θJA
PRMETER
SYMBOL
Typ
Unit
NOTES
Junction to Ambient
θJA
20.8
°C/W
Junction to Case
θJC
2.3
°C/W
Junction to Pins
θJB
4.3
°C/W
PIN CAPACITANCE
Note: 1. Parameters are tested with RQ=250
and V DDQ=1.5V.
2. Periodically sampled and not 100% tested.
PRMETER
SYMBOL
TESTCONDITION
Typ
Max
Unit
NOTES
Address Control Input Capacitance
CIN
VIN=0V
4
5
pF
Input and Output Capacitance
COUT
VOUT=0V
6
7
pF
Clock Capacitance
CCLK
-
5
6
pF
SRAM#1
D
SA
R W BW0
Q
ZQ
K
C C
SRAM#4
R
Vt
R=50
Vt=VREF
Vt
R
R=250
BW1
K
D
SA
RW BW0
Q
K
C C
BW1
K
Data In
Data Out
Address
R
W
BW
Return CLK
Source CLK
Return CLK
Source CLK
MEMORY
CONTROLLER
CQ
ZQ R=250
CQ
ZQ
SRAM1 Input CQ
SRAM4 Input CQ
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相关代理商/技术参数 |
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| K7R323682C | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM |
| K7R323682C-EC25000 | 制造商:Samsung SDI 功能描述: |
| K7R323682C-FC16000 | 制造商:Samsung 功能描述:32M 32MSYNC QUAD DATA RATE II X36 FBGA - Trays |
| K7R323682C-FC20 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM |
| K7R323682C-FC25 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM |
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