- 您现在的位置：买卖IC网 > PDF目录374298 > K9F1208Q0A (SAMSUNG SEMICONDUCTOR CO. LTD.) Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight PDF资料下载
参数资料
| 型号： | K9F1208Q0A |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分类： | 圆形连接器 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| 中文描述： | 512Mb/256Mb 1.8 NAND闪存勘误表 |
| 文件页数： | 7/39页 |
| 文件大小： | 655K |
| 代理商： | K9F1208Q0A |
第1页第2页第3页第4页第5页第6页当前第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页
K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
6
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-VCB0,VIB0,FCB0,FIB0
PIN DESCRIPTION
Pin NAME
Pin Function
I/O
0
~ I/O
7
(K9F5608X0C)
I/O
0
~ I/O
15
(K9F5616X0C)
DATA INPUTS/OUTPUTS
The I/O pins are used to input command, address and data, and to output data during read operations. The
I/O pins float to high-z when the chip is deselected or when the outputs are disabled.
I/O8 ~ I/O15 are used only in X16 organization device. Since command input and address input are x8 oper-
ation, I/O8 ~ I/O15 are not used to input command & address. I/O8 ~ I/O15 are used only for data input and
output.
CLE
COMMAND LATCH ENABLE
The CLE input controls the activating path for commands sent to the command register. When active high,
commands are latched into the command register through the I/O ports on the rising edge of the WE signal.
ALE
ADDRESS LATCH ENABLE
The ALE input controls the activating path for address to the internal address registers. Addresses are
latched on the rising edge of WE with ALE high.
CE
CHIP ENABLE
The CE input is the device selection control. When the device is in the Busy state, CE high is ignored, and
the device does not return to standby mode in program or erase opertion. Regarding CE control during read
operation, refer to ’Page read’ section of Device operation .
RE
READ ENABLE
The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid
tREA after the falling edge of RE which also increments the internal column address counter by one.
WE
WRITE ENABLE
The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of
the WE pulse.
WP
WRITE PROTECT
The WP pin provides inadvertent write/erase protection during power tra nsitions. The internal high voltage
generator is reset when the WP pin is active low. When LOCKPRE is a logic high and WP is a logic low, the
all blocks go to lock state.
R/B
READY/BUSY OUTPUT
The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or
random read operation is in process and returns to high state upon completion. It is an open drain output and
does not float to high-z condition when the chip is deselected or when outputs are disabled.
VccQ
OUTPUT BUFFER POWER
V
CC
Q is the power supply for Output Buffer.
VccQ is internally connected to Vcc, thus should be biased to Vcc.
Vcc
POWER
V
CC
is the power supply for device.
Vss
GROUND
N.C
NO CONNECTION
Lead is not internally connected.
DNU
DO NOT USE
Leave it disconnected
LOCKPRE
LOCK MECHANISM & POWER-ON AUTO-READ ENABLE
To Enable and disable the Lock mechanism and Power On Auto Read. When LOCKPRE is a logic high,
Block Lock mode and Power-On Auto-Read mode are enabled, and when LOCKPRE is a logic low, Block
Lock mode and Power-On Auto-Read mode are disabled. Power-On Auto-Read mode is available only on
3.3V device(K9F56XXU0C)
Don’t leave it N.C
.
Not using
LOCK MECHANISM & POWER-ON AUTO-READ, connect it Vss.
NOTE
: Connect all V
CC
and V
SS
pins of each device to common power supply outputs.
Do not leave V
CC
or V
SS
disconnected.
相关PDF资料 |
PDF描述 |
|---|---|
| K9F5608U0M-YCB0 | 32M x 8 Bit NAND Flash Memory |
| K9F5608U0M-YIB0 | 32M x 8 Bit NAND Flash Memory |
| K9F5608U0M- | 32M x 8 Bit NAND Flash Memory |
| K9F5616Q0B-DCB0 | SCSI-5 MALE SCSI-3 MALE CABLE 10 FT |
| K9F5616Q0B-DIB0 | MICRO D68 M/CENT50 M 2FT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| K9F1208Q0A-XXB0 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata |
| K9F1208Q0B | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory |
| K9F1208Q0B-D | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory |
| K9F1208Q0B-F | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory |
| K9F1208Q0B-H | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory |
发布紧急采购，3分钟左右您将得到回复。