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参数资料
| 型号： | KA4F3M |
| 厂商： | NEC Corp. |
| 英文描述： | RESISTOR BUILT-IN TYPE NPN TRANSISTOR |
| 中文描述： | 电阻内置型NPN晶体管 |
| 文件页数： | 12/22页 |
| 文件大小： | 373K |
| 代理商： | KA4F3M |
Data Sheet D16495EJ3V0DS
2
KA4xxx
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB = 50 V, IE = 0
100
nA
DC Current Gain
hFE1
VCE = 5.0 V, IC = 5.0 mA
Note1
-
hFE2
VCE = 5.0 V, IC = 50 mA
Note1
-
Collector Saturation Voltage
VCE(sat)
IC = 5.0 mA, IB = 0.25 mA
0.2
V
Low-level Input Voltage
VIL
VCE = 5.0 V, IC = 100
A
Note2
V
High-level Input Voltage
VIH
VCE = 0.2 V, IC = 5.0 mA
Note2
V
Input Resistor
R1
Note3
k
Emitter to Base Resistor
R2
Note3
k
Note 1
PART NUMBER
hFE1
hFE2
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
KA4A4M
35
100
80
-
KA4F4M
60
195
90
-
KA4L4M
85
340
95
-
KA4L3M
20
80
-
KA4L3N
35
100
80
-
KA4L3Z
135
600
100
-
KA4A3Q
35
100
80
-
KA4A4P
85
340
95
-
KA4F4N
85
340
95
-
KA4L4L
60
195
90
-
KA4A4Z
135
600
100
-
KA4F4Z
135
600
100
-
KA4L4Z
135
600
100
-
KA4F3M
8
50
-
KA4F3P
35
100
80
-
KA4F3R
85
340
95
-
KA4A4L
20
80
-
KA4L4K
35
100
80
-
Note 2
PART NUMBER
VIL
VIH
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
KA4A4M
0.8
3.0
V
KA4F4M
0.8
4.0
V
KA4L4M
0.8
5.0
V
KA4L3M
0.8
3.0
V
KA4L3N
0.6
3.0
V
KA4L3Z
0.5
1.2
V
KA4A3Q
0.5
2.0
V
KA4A4P
0.5
3.0
V
KA4F4N
0.6
3.0
V
KA4L4L
0.9
6.0
V
KA4A4Z
0.5
2.0
V
KA4F4Z
0.5
3.0
V
KA4L4Z
0.5
4.0
V
KA4F3M
0.8
3.0
V
KA4F3P
0.5
2.0
V
KA4F3R
0.5
2.0
V
KA4A4L
0.9
6.0
V
KA4L4K
2.0
8.0
V
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|---|---|
| KA4F3P | RESISTOR BUILT-IN TYPE NPN TRANSISTOR |
| KA4F3R | RESISTOR BUILT-IN TYPE NPN TRANSISTOR |
| KA4F4M | RESISTOR BUILT-IN TYPE NPN TRANSISTOR |
| KA4L3M | RESISTOR BUILT-IN TYPE NPN TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| KA4F3M-T1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| KA4F3P | 制造商:NEC 制造商全称:NEC 功能描述:RESISTOR BUILT-IN TYPE NPN TRANSISTOR |
| KA4F3P-T1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| KA4F3R | 制造商:NEC 制造商全称:NEC 功能描述:RESISTOR BUILT-IN TYPE NPN TRANSISTOR |
| KA4F3R-T1-A | 制造商:Renesas Electronics Corporation 功能描述: |
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