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参数资料
| 型号： | KA4F4M |
| 厂商： | NEC Corp. |
| 英文描述： | RESISTOR BUILT-IN TYPE NPN TRANSISTOR |
| 中文描述： | 电阻内置型NPN晶体管 |
| 文件页数： | 3/22页 |
| 文件大小： | 373K |
| 代理商： | KA4F4M |
Data Sheet D16495EJ3V0DS
11
KA4xxx
[KA4A4P]
TYPICAL CHARACTERISTICS (TA = 25°C)
COLLECTOR TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
2
0
10
20
30
40
50
46
8
10
VCE - Collector to Emitter Voltage - V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
IC
-
Collector
Current
-
mA
IB = 180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
20 A
V
CE
-
Co
lle
ct
or
to
E
m
itte
rVo
lta
ge
-
V
0
0.1
0.2
0.3
0.4
0.5
0
2040
6080
100
VIN = 5.0 V
10.0 V
15.0 V
IC - Collector Current - mA
DC CURRENT GAIN vs. COLLECTOR CURRENT
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
h
FE
-
DC
C
ur
re
nt
G
ain
1
10
100
1000
110
100
VCE = 5.0 V
TA = 75°C
25°C
IC - Collector Current - mA
V
CE
(s
at
)
-
C
ol
lector
S
aturation
Vo
ltage
-
V
0.01
0.1
1
110
100
IC = 10 IB
TA = 75°C
25°C
IC - Collector Current - mA
INPUT VOLTAGE vs. COLLECTOR CURRENT
COLLECTOR CURRENT vs. INPUT VOLTAGE
V
IN
-
Inpu
tVol
tag
e-
V
0.1
1
10
100
110
100
VCE = 0.2 V
TA =
25°C
75°C
IC - Collector Current - mA
IC
-
C
ol
lec
to
rCu
rr
en
t-
A
1
10
100
1000
0.2
0.4
0.6
0.8
1
1.2
VCE = 5.0 V
TA = 75°C
25°C
VIN - Input Voltage - V
RESISTER vs. AMBIENT TEMPERATURE
R
-
Re
si
st
e
r-
k
0
10
20
30
40
50
60
-25
0
25
50
75
100
R1
R2
TA - Ambient Temperature - °C
相关PDF资料 |
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|---|---|
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相关代理商/技术参数 |
参数描述 |
|---|---|
| KA4F4M-T1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| KA4F4N | 制造商:NEC 制造商全称:NEC 功能描述:RESISTOR BUILT-IN TYPE NPN TRANSISTOR |
| KA4F4N-T1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| KA4F4Z | 制造商:NEC 制造商全称:NEC 功能描述:RESISTOR BUILT-IN TYPE NPN TRANSISTOR |
| KA4L3M | 制造商:NEC 制造商全称:NEC 功能描述:RESISTOR BUILT-IN TYPE NPN TRANSISTOR |
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