参数资料
型号: KA5L0380RYDTU
厂商: Fairchild Semiconductor
文件页数: 3/15页
文件大小: 0K
描述: IC FPS PWR SWITCH SMPS TO-220F-4
标准包装: 50
频率范围: 45kHz ~ 55kHz
输入电压: 9 V ~ 30 V
输出电压: 800V
功率(瓦特): 75W
工作温度: 25°C ~ 160°C
封装/外壳: TO-220-4 全封装(成形引线)
供应商设备封装: TO-220F-4L
包装: 管件
KA5X03XX-SERIES
Electrical Characteristics (SenseFET Part)
(Ta = 25 ° C unless otherwise specified)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
KA5H0365R, KA5M0365R, KA5L0365R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain-Source on Resistance (Note)
BV DSS
I DSS
R DS(ON)
V GS =0V, I D =50 μ A
V DS =Max. Rating, V GS =0V
V DS =0.8Max. Rating,
V GS =0V, T C =125 ° C
V GS =10V, I D =0.5A
650
-
-
-
-
-
-
3.6
-
50
200
4.5
V
μ A
μ A
Ω
Forward Transconductance
(Note)
gfs
V DS =50V, I D =0.5A
2.0
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
V GS =0V, V DS =25V,
f=1MHz
V DD =0.5BV DSS , I D =1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
V GS =10V, I D =1.0A,
V DS =0.5BV DSS (MOSFET
switching time is essentially
independent of
operating temperature)
-
-
-
-
-
-
-
-
-
-
720
40
40
150
100
150
42
-
7.3
13.3
-
-
-
-
-
-
-
34
-
-
pF
nS
nC
KA5H0380R, KA5M0380R, KA5L0380R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain-Source on Resistance (Note)
BV DSS
I DSS
R DS(ON)
V GS =0V, I D =50 μ A
V DS =Max. Rating, V GS =0V
V DS =0.8Max. Rating,
V GS =0V, T C =125 ° C
V GS =10V, I D =0.5A
800
-
-
-
-
-
-
4.0
-
250
1000
5.0
V
μ A
μ A
Ω
Forward Transconductance
(Note)
gfs
V DS =50V, I D =0.5A
1.5
2.5
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
V GS =0V, V DS =25V,
f=1MHz
V DD =0.5BV DSS , I D =1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
V GS =10V, I D =1.0A,
V DS =0.5BV DSS (MOSFET
switching time is
essentially independent of
operating temperature)
-
-
-
-
-
-
-
-
-
-
779
75.6
24.9
40
95
150
60
-
7.2
12.1
-
-
-
-
-
-
-
34
-
-
pF
nS
nC
Note:
1. Pulse test: Pulse width ≤ 300 μ S, duty ≤ 2%
S = ----
2.
1
R
3
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