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参数资料
| 型号： | KA5M0365RYDTU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/15页 |
| 文件大小： | 0K |
| 描述： | IC SWIT PWM CM OVP UVLO HV TO220 |
| 标准包装： | 50 |
| 频率范围： | 61 ~ 73kHz |
| 输入电压： | 9 V ~ 30 V |
| 输出电压： | 650V |
| 功率（瓦特）： | 75W |
| 工作温度： | 25°C ~ 160°C |
| 封装/外壳： | TO-220-4 全封装（成形引线） |
| 供应商设备封装： | TO-220F-4L |
| 包装： | 管件 |
KA5X03XX-SERIES
Electrical Characteristics (SenseFET Part)
(Ta = 25 ° C unless otherwise specified)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
KA5H0365R, KA5M0365R, KA5L0365R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain-Source on Resistance (Note)
BV DSS
I DSS
R DS(ON)
V GS =0V, I D =50 μ A
V DS =Max. Rating, V GS =0V
V DS =0.8Max. Rating,
V GS =0V, T C =125 ° C
V GS =10V, I D =0.5A
650
-
-
-
-
-
-
3.6
-
50
200
4.5
V
μ A
μ A
Ω
Forward Transconductance
(Note)
gfs
V DS =50V, I D =0.5A
2.0
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
V GS =0V, V DS =25V,
f=1MHz
V DD =0.5BV DSS , I D =1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
V GS =10V, I D =1.0A,
V DS =0.5BV DSS (MOSFET
switching time is essentially
independent of
operating temperature)
-
-
-
-
-
-
-
-
-
-
720
40
40
150
100
150
42
-
7.3
13.3
-
-
-
-
-
-
-
34
-
-
pF
nS
nC
KA5H0380R, KA5M0380R, KA5L0380R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain-Source on Resistance (Note)
BV DSS
I DSS
R DS(ON)
V GS =0V, I D =50 μ A
V DS =Max. Rating, V GS =0V
V DS =0.8Max. Rating,
V GS =0V, T C =125 ° C
V GS =10V, I D =0.5A
800
-
-
-
-
-
-
4.0
-
250
1000
5.0
V
μ A
μ A
Ω
Forward Transconductance
(Note)
gfs
V DS =50V, I D =0.5A
1.5
2.5
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
V GS =0V, V DS =25V,
f=1MHz
V DD =0.5BV DSS , I D =1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
V GS =10V, I D =1.0A,
V DS =0.5BV DSS (MOSFET
switching time is
essentially independent of
operating temperature)
-
-
-
-
-
-
-
-
-
-
779
75.6
24.9
40
95
150
60
-
7.2
12.1
-
-
-
-
-
-
-
34
-
-
pF
nS
nC
Note:
1. Pulse test: Pulse width ≤ 300 μ S, duty ≤ 2%
S = ----
2.
1
R
3
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