参数资料
| 型号： | KIT33810EKEVME |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 5/37页 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL FOR MC33810 |
| 标准包装： | 1 |
| 主要目的： | 车载 |
| 嵌入式： | 否 |
| 已用 IC / 零件： | MC33810 |
| 主要属性： | 8 通道 |
| 次要属性： | SPI 接口 |
| 已供物品： | 板，线缆，CD |
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ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 2. Maximum Ratings
All voltages are with respect to ground unless otherwise noted.
Ratings
Symbol
Value
Unit
ELECTRICAL RATINGS
VPWR Supply Voltage (1)
V PWR
-1.5 to 45
V DC
VDD Supply
Voltage (1)
V DD
-0.3 to 7.0
V DC
SPI Interface and Logic Input Voltage (CS , SI, SO, SCLK, OUTEN,
DIN0 - DIN3, GIN0 - GIN3, SPKDUR, NOMI, MAXI, RSP,RSN)
IGBT/General Purpose Gate Pre-driver Drain Voltage (V FB0 to V FB3 )
Injector Output Voltage (OUTx)
General Purpose Gate Pre-driver Output Voltage (GDx)
Output Clamp Energy (OUT0 to OUT3)(Single Pulse)
V IL
V IH
V FB
V OUTX
V GDx
E CLAMP
-0.3 to VDD
-1.5 to 60
-1.5 to 60
-0.3 to 10
100
V DC
V DC
V DC
V DC
mJ
T JUNCTION = 150°C, I OUT = 1.5 A
Output Clamp Energy (OUT0 to OUT3)(Continuous Pulse)
E CLAMP
100
mJ
T JUNCTION = 125°C, I OUT = 1.0 A (Max Injector frequency is 70 Hz)
Output Continuous Current (OUT0 to OUT3)
I OSSSS
2.0
A
T JUNCTION = 150°C
Maximum Voltage for RSN and RSP inputs
Frequency of SPI Operation (VDD = 5.0 V)
(2), (3)
ESD Voltage
Human Body Model (HBM)
Machine Model (MM)
Charge Device Model (CDM)
V RSX
–
V ESD1
V ESD2
V ESD3
-0.3 - VDD
6.0
±2000
±200
±750
V DC
MHz
V
THERMAL RATINGS
Operating Temperature
° C
Ambient
Junction2
Case
T A
T J
T C
-40 to 125
-40 to 150
-40 to 125
Storage Temperature
Power Dissipation (T A = 25 ° C)
Peak Package flow Temperature During Solder Mounting
T STG
P D
T SOLDER
-55 to 150
1.7
° C
W
° C
DWB Suffix
EW Suffix
Thermal Resistance
240
245
° C/W
Junction-to-Ambient
Junction- to-Lead
Junction-to-Flag
R θ JA
R θ JL
R θ JC
75
8.0
1.2
33810
Analog Integrated Circuit Device Data
Freescale Semiconductor
5
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